Patent classifications
B81B2201/10
Micro fluid actuator
A micro fluid actuator includes an orifice layer, a flow channel layer, a substrate, a chamber layer, a vibration layer, a lower electrode layer, a piezoelectric actuation layer and an upper electrode layer, which are stacked sequentially. An outflow aperture, a plurality of first inflow apertures and a second inflow aperture are formed in the substrate by an etching process. A storage chamber is formed in the chamber layer by the etching process. An outflow opening and an inflow opening are formed in the orifice layer by the etching process. An outflow channel, an inflow channel and a plurality of columnar structures are formed in the flow channel layer by a lithography process. By providing driving power which have different phases to the upper electrode layer and the lower electrode layer, the vibration layer is driven to displace in a reciprocating manner, so as to achieve fluid transportation.
Semiconductor package structure and method for manufacturing the same
A semiconductor package structure includes an electronic device having a first surface and an exposed region adjacent to the first surface; a dam disposed on the first surface and surrounding the exposed region of the electronic device; and a filter structure disposed on the dam.
METHOD FOR PRODUCING A PLURALITY OF SENSOR DEVICES, AND SENSOR DEVICE
A method for producing a plurality of sensor devices. The method includes: furnishing a substrate having contact points in a plurality of predetermined regions for sensor chips; disposing the sensor chips in the predetermined regions on the substrate, and electrically contacting the sensor chips to the contact points; attaching a frame structure with an adhesive material on the substrate and between the sensor chips, the frame structure proceeding laterally around the sensor chips, the frame structure extending, after attachment, vertically beyond the sensor chips and forming a respective cavity for at least one of the sensor chips, and a membrane spanning at least one of the cavities for the sensor chips so as to cover it; and singulating the substrate, or the frame structure and the substrate, around the respective cavities into several sensor devices.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.
NON-PLANNAR INGRESS PROTECTION ELEMENT FOR A SENSOR DEVICE
A sensor device includes a substrate, a microelectromechanical systems (MEMS) transducer disposed on the substrate, in integrated circuit, and a cover disposed on the substrate. The sensor device includes a port or an opening for allowing acoustic energy to be incident on the MEMS transducer. The sensor device further includes an ingress protection element positioned to cover the port, the ingress protection element comprising at least one non-planar portion.
Plurality of filters
A method may include etching a number of holes into a carrier wafer layer to form a plurality of filters in the carrier wafer layer, patterning a chamber layer over a first side of the carrier wafer layer to form chambers above each filter formed in the carrier wafer layer, forming a layer over the chamber layer, grinding a second side of the carrier wafer layer to expose the number of holes etched into the carrier wafer layer, and bonding a molded substrate to the carrier wafer layer opposite the chamber layer.
MEMS package, MEMS microphone and method of manufacturing the MEMS package
A MEMS package includes a MEMS chip, a package substrate which the MEMS chip is adhered and a thin-film filter which is adhered to the package substrate or the MEMS chip. The thin-film filter includes a thin-film part having a film surface and a rear film surface arranged a rear side of the film surface, and a plurality of through holes being formed to penetrate the thin-film part from the film surface to the rear film surface. The through holes are formed in an adhesive region of the thin-film part. The adhesive region is adhered to the package substrate or the MEMS chip.
MULTIPLY ENCAPSULATED MICRO ELECTRICAL MECHANICAL SYSTEMS DEVICE
There is provided a micro electrical mechanical systems device package comprising: a first vacuum enclosure comprising a first enclosure wall; a micro electrical mechanical systems device being positioned within the first vacuum enclosure on a first side of the first enclosure wall; and a second vacuum enclosure, the second side of the first enclosure wall being within the second vacuum enclosure. Advantageously, the first vacuum enclosure is entirely within the second vacuum enclosure.
Method for manufacturing a MEMS sensor
A method for manufacturing a MEMS sensor. The method includes: providing a substrate, applying a support layer onto a back side of the substrate, forming at least one cavity in the substrate in such a way that an access to the back side from the front side is formed, introducing a MEMS structure into the at least one cavity, and fixing the MEMS structure on the support layer.
Thin-film filter, thin-film filter substrate, method of manufacturing the thin-film filter, method of manufacturing the thin-film filter substrate, MEMS microphone and method of manufacturing the MEMS microphone
A thin-film filter includes thin-film part having a film surface and a rear film surface arranged at the rear side of the film surface, a plurality of through holes, being formed to penetrate the thin-film part from the film surface to the rear film surface, the through holes are formed along by a slanting direction being made an acute angle or an obtuse angle with the film surface, and stripes-formed inner wall surfaces. The stripes-formed inner wall surfaces include stripe-like parts formed along by the slanting direction. The stripes-formed inner wall surfaces are formed inside the respective through holes.