A base, which has a main surface and a back surface on an opposite side from the main surface and is made of metal, an optical surface provided on the main surface, and a vibrating element provided on the main surface or the back surface are included, in which the base has a support portion, a first extending portion and a second extending portion extending from the support portion, a movable portion disposed between the first extending portion and the second extending portion, and a first connecting portion connecting the first extending portion and the movable portion to each other, and a second connecting portion connecting the second extending portion and the movable portion to each other.

A piezoelectric microelectromechanical system microphone comprises a support substrate, a piezoelectric element configured to deform and generate an electrical potential responsive to impingement of sound waves on the piezoelectric element, the piezoelectric element attached to the support substrate about a perimeter of the piezoelectric element, a sensing electrode disposed on the piezoelectric element and configured to sense the electrical potential, and corrugations defined in the piezoelectric element about the perimeter of the piezoelectric element to release residual stress and improve sensitivity of the piezoelectric microelectromechanical system microphone.

A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.

The application describes MEMS transducer having a flexible membrane and which seeks to alleviate and/or redistribute stresses within the membrane layer. A membrane having a first/active region and a second/inactive region is described.

The application describes MEMS transducer structures comprising a membrane structure having a flexible membrane layer and at least one electrode layer. The electrode layer is spaced from the flexible membrane layer such that at least one air volume extends between the material of the electrode layer and the membrane layer. The electrode layer is supported relative to the flexible membrane by means of a support structure which extends between the first electrode layer and the flexible membrane layer.

A method of manufacturing a semiconductor structure includes following operations. A first substrate is provided. A plate is formed over the first substrate. The plate includes a first tensile member, a second tensile member, a semiconductive member between the first tensile member and the second tensile member, and a plurality of apertures penetrating the first tensile member, the semiconductive member and the second tensile member. A membrane is formed over and separated from the plate. The membrane include a plurality of holes. A plurality of conductive plugs passing through the plate or membrane are formed. A plurality of semiconductive pads are formed over the plurality of conductive plugs. The plate is bonded to a second substrate. The second substrate includes a plurality of bond pads, and the semiconductive pads are in contact with the bond pads.

A microelectromechanical device is provided that includes a mobile rotor and a fixed stator in a device plane. Moreover, a fixed wall defines a wall plane that is adjacent to the device plane and a motion limiter is provided to prevent the rotor from coming into direct physical contact with the fixed wall. The motion limiter includes a shock absorber that extends from the rotor to the stator and a fixed stopper structure that protrudes from the fixed wall toward the shock absorber.

A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

A method for manufacturing a microelectromechanical systems (MEMS) microphone comprises depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate, etching the substrate to define a cavity, releasing the membrane by removing at least the first sacrificial layer, and forming at least one anchor at the edge of the membrane.

A pressure sensor chip includes a third conductive layer, a second insulating layer, a first conductive layer, a first insulating layer, and a second conductive layer stacked in order. The first insulating layer includes first and second cavities communicating externally. The second insulating layer includes third and fourth cavities respectively communicating with the second and first cavities. The first conductive layer includes first and second diaphragms, the second conductive layer includes first and second electrodes, and the third conductive layer includes third and fourth electrodes. The first diaphragm and the first electrode face each other with the cavity interposed therebetween, the second diaphragm and the electrode face each other with the first cavity interposed therebetween, the first diaphragm and the third electrode face each other with the fourth cavity interposed therebetween, and the second diaphragm and the fourth electrode face each other with the fourth cavity interposed therebetween.