A microfluidic chip and a fabrication method of the microfluidic chip are provided. The microfluidic chip includes an array substrate, and a hydrophobic layer disposed on a side of the array substrate. The hydrophobic layer includes at least one through-hole, and a through-hole of the at least one through-hole penetrates through the hydrophobic layer along a direction perpendicular to a plane of the array substrate. The microfluidic chip also includes at least one hydrophilic structure. A hydrophilic structure of the at least one hydrophilic structure is disposed in the through-hole.

In a method for creating hydrophilic surfaces or surface regions on one or more silicon surfaces of a substrate, a vapour phase of hydrogen peroxide is generated in a reactor by heating an aqueous hydrogen peroxide solution. The substrate having the silicon surface or surfaces to be treated is exposed to the vapour phase, whereby a hydrophilisation of the silicon surfaces in achieved.

A microfluidic assembly can include a first microchannel substrate defining one or more first microchannels, a second microchannel substrate defining one or more second microchannels. The assembly can further include a membrane positioned between the first and second microchannel substrates and comprising a first polymeric layer, a second polymeric layer, and one or more graphene layers disposed between the first and second polymeric layers. At least a portion of the first microchannels can overlap at least a portion of the second microchannels such that, when a first fluid is present in the first microchannels and a second fluid is present in the second microchannels, the first fluid and the second fluid contact opposite sides of the membrane.

The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.

A microelectromechanical system includes a membrane of amorphous carbon having a thickness between 1 nm and 50 nm, and for example between 3 nm and 20 nm.

A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method can comprise forming a MEMS layer based on fusion bonding a handle MEMS with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

A method of manufacturing a composite material, comprising providing a conductive polymer having a hydrophilic end and adding a metal oxide, such that the metal oxide is connected to the hydrophilic end of the conductive polymer, wherein the metal oxide is obtained by subjecting a metal oxide precursor to a dehydration reaction, a polymerization reaction, a condensation reaction, or a combination thereof.

A fluidic device includes a fluidic layer, a capture material, and an electronics layer, the fluidic layer includes a main channel and a pair of sample channels fluidly coupled to the main channel. The pair of sample channels is configured to receive and introduce a sample material into the device. The sample material includes an analyte. The capture material is positioned in a portion of the main channel that is spaced from the pair of sample channels. The capture material has a three-dimensional matrix of receptors therein configured to bond with the analyte. The capture material has a length that is associated with a dynamic range of the fluidic device and a cross-sectional area that is associated with a sensitivity of the fluidic device. The electronics layer includes electrodes configured to measure an electrical resistance through a portion of the capture material.

Provided is a micro-fluidic chip, including a first substrate and a second substrate opposite to each other. A liquid storage cavity is formed between the first substrate and the second substrate, and a liquid inlet hole penetrating through the first substrate in a thickness direction is formed in the first substrate. The first substrate includes a first electrode layer and a hydrophobic layer that are sequentially disposed in the thickness direction of the first substrate, and the first electrode layer is on a surface of the hydrophobic layer away from the second substrate. The second substrate includes an adjustment layer and a second electrode layer that are sequentially disposed in a thickness direction of the second substrate, and the second electrode layer is on a surface of the adjustment layer away from the first substrate. A micro-fluidic system and a control method of the micro-fluidic chip are also provided.

A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.