A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.

A sensor device may include a base layer, and an ASIC element disposed on the base layer. The ASIC element may include a plurality of electrical contact points. The sensor device may include a MEMS element. The MEMS element may include a plurality of through-silicon vias. The sensor device may include a plurality of conductive contact elements. Each conductive contact element may be disposed between, and electrically coupling, a respective through-silicon via and a respective electrical contact point. The sensor device may include a protective layer disposed between the ASIC element and the MEMS element. The protective layer may be composed of material(s) having a physical property defined to permit the protective layer to mitigate stress forces directed from the ASIC element to the MEMS element, to prevent corrosion, and/or to prevent leakage current between electrical connections due to pollution and/or humidity.

Embodiments may relate to a microelectronic package that includes an overmold material, a redistribution layer (RDL) in the overmold material, and a die in the overmold material electrically coupled with the RDL on an active side of the die. The RDL is configured to provide electrical interconnection within the overmold material and includes at least one mold interconnect. The microelectronic package may also include a through-mold via (TMV) disposed in the overmold material and electrically coupled to the RDL by the mold interconnect. In some embodiments, the microelectronics package further includes a surface mount device (SMD) in the overmold material. The microelectronics package may also include a substrate having a face on which the overmold is disposed.

A light deflector includes: a conductor layer formed as an integral layer on an SOI oxide film layer; a piezoelectric element having an upper electrode, a piezoelectric film, and a conductor layer serving as a lower electrode; an interlayer insulating film covering the conductor layer and the piezoelectric element from the surface side; a plurality of wirings formed on the surface of the interlayer insulating film in such a manner as to extend in the region of the surface of the interlayer insulating film under which the conductor layer exists; and a ground electrode connected to the conductor layer.

A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region and coupled to the first microelectronic component by the first and second direct bonding regions, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, and wherein individual first metal contacts in the first direct bonding region are coupled to respective individual second metal contacts in the second direct bonding region; and a void between an individual first metal contact and a respective individual second metal contact.

A MEM vibration sensor includes a substrate including a first supporting-portion and a cavity and a sensing-device disposed on the substrate. The sensing-device includes a second supporting-portion correspondingly disposed over and connected with the first supporting-portion, a first sensing-unit disposed on the cavity, a first mass-block disposed on the cavity, a second sensing-unit disposed on the first sensing-unit and the first mass-block, a first metal pad disposed on the third supporting-portion and electrically coupled with the first sensing-unit, and a second metal pad disposed on the third supporting-portion and electrically coupled with the second sensing-unit.

The present disclosure relates to a micro-electromechanical system (MEMS) structure including one or more semiconductor devices arranged on or within a first substrate and a MEMS substrate having an ambulatory element. The MEMS substrate is connected to the first substrate by a conductive bonding structure. A capping substrate is arranged on the MEMs substrate. The capping substrate includes a semiconductor material that is separated from the first substrate by the MEMS substrate. One or more conductive polysilicon vias include a polysilicon material that continuously extends from the conductive bonding structure, completely through the MEMS substrate, and to within the capping substrate. The semiconductor material of the capping substrate covers opposing sidewalls of the polysilicon material and an upper surface of the polysilicon material that is between the opposing sidewalls.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The MEMS substrate comprises a moveable element arranged over a carrier substrate. The epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts overlies the epitaxial layer. A first subset of the plurality of contacts overlies the moveable element. The plurality of contacts respectively has an ohmic contact with the epitaxial layer.

A ultrasonic transducer device includes a transducer bottom electrode layer disposed over a substrate, and a plurality of vias that electrically connect the bottom electrode layer with the substrate, wherein substantially an entirety of the plurality of vias are disposed directly below a footprint of a transducer cavity. Alternatively, the transducer bottom electrode layer includes a first metal layer in contact with the plurality of vias and a second metal layer formed on the first metal layer, the first metal layer including a same material as the plurality of vias.