A method is provided for checking a sensor value of a MEMS sensor. In the process, an output signal of the MEMS sensor is detected and the sensor value is ascertained as a function of the output signal. In addition, frequency components of the output signal are examined and a determination is made as to whether the ascertained sensor value is reliable or unreliable as a function of the examination of the frequency components. If the sensor value is determined to be unreliable, the sensor value is discarded or provided with a lower weighting, or a warning it output relating to the unreliability of the sensor value or an item of information about the unreliability of the sensor value is stored.

A method for protecting a MEMS unit, in particular a MEMS sensor, against infrared investigations, at least one area of the MEMS unit being doped, the at least one doped area absorbing, reflecting or diffusely scattering more than 50%, in particular more than 90%, of an infrared light incident upon it.

An assembly made up of a micro-electro-mechanical system as physical unclonable function, which in reaction to a challenge, outputs a response in accordance with a mapping rule, and a controllable control element which is equipped, in accordance with a control command, to adjust an ambient parameter influencing the mapping rule.

A method is provided for protecting a MEMS unit against infrared investigations, at least one layer being built into the structure of the MEMS unit or at least one layer being applied on a surface of the MEMS unit. The at least one layer absorbs, reflects or diffusely scatters more than 50%, in particular more than 90% of an infrared light incident upon it.

A method is provided for checking a sensor value of a MEMS sensor. In the process, an output signal of the MEMS sensor is detected and the sensor value is ascertained as a function of the output signal. In addition, frequency components of the output signal are examined and a determination is made as to whether the ascertained sensor value is reliable or unreliable as a function of the examination of the frequency components. If the sensor value is determined to be unreliable, the sensor value is discarded or provided with a lower weighting, or a warning it output relating to the unreliability of the sensor value or an item of information about the unreliability of the sensor value is stored.

A semiconductor device can include a first metal trace, a first via disposed on the first metal trace, a second metal trace disposed on the first via, and an insulator interposed between the first metal trace and the first via. The insulator can be configured to lower an energy barrier or redistribute structure defects or charge carriers, such that the first metal trace and the first via are electrically connected to each other when power is applied. The semiconductor device can further include a dummy via disposed on the first metal trace.

A method is provided for protecting a MEMS unit, in particular a MEMS sensor, against infrared investigations, a surface patterning being performed for at least one first area of a surface of the MEMS unit, the first area absorbing, reflecting or diffusely scattering more than 50%, in particular more than 90% of an infrared light incident upon it.

A method for protecting a MEMS unit, in particular a MEMS sensor, against infrared investigations, at least one area of the MEMS unit being doped, the at least one doped area absorbing, reflecting or diffusely scattering more than 50%, in particular more than 90%, of an infrared light incident upon it.

A method is provided for protecting a MEMS unit, in particular a MEMS sensor, against infrared investigations, a surface patterning being performed for at least one first area of a surface of the MEMS unit, the first area absorbing, reflecting or diffusely scattering more than 50%, in particular more than 90% of an infrared light incident upon it.

A method is provided for protecting a MEMS unit against infrared investigations, at least one layer being built into the structure of the MEMS unit or at least one layer being applied on a surface of the MEMS unit. The at least one layer absorbs, reflects or diffusely scatters more than 50%, in particular more than 90% of an infrared light incident upon it.