A MEMS module includes: a MEMS element provided with a substrate in which a hollow portion is formed, and including a movable portion, which is a part of the substrate, around the hollow portion, the movable portion having a thickness whose shape is changeable by an air pressure difference between an air pressure inside the hollow portion and an air pressure outside the substrate; and an electronic component, to which an output signal of the MEMS element is inputted, formed on the substrate, wherein the electronic component and the MEMS element are spaced apart from each other in a direction perpendicular to a thickness direction of the movable portion.

A piezoelectric microelectromechanical systems device is provided, having a first piezoelectric layer, a first metal layer including a first metal, a second metal layer including a second metal, the first and second metals having different properties to compensate deflection due to thermal stress of any or all of the piezoelectric layer, the first metal layer, and second metal layer and a substrate including at least one wall defining a cavity and the at least one wall supporting the layers. The method for making the piezoelectric microelectromechanical systems device is also provided.

A micromechanical sensor. The sensor includes a substrate, a cap element situated on the substrate, at least one seismic mass that is deflectable orthogonal to the cap element, an internal pressure that is lower by a defined amount relative to the surrounding environment prevailing inside a cavity, and a compensating element designed to provide a homogenization of a temperature gradient field in the cavity during operation of the micromechanical sensor.

A method for manufacturing a substrate including a region, which is mechanically decoupled from a support and has at least one component situated on the region; at least one recess being introduced on a front side of the substrate; an etching pattern being prepared on a back side of the substrate and etched anisotropically in such a manner, that vertical channels are produced on the back side of the substrate; and subsequently, a cavity being introduced at the back side of the substrate; the at least one recess on the front side of the substrate being connected to the cavity on the back side of the substrate; and in at least one region between the front side of the substrate and the cavity, at least two recesses or at least two segments of a recess being interconnected by at least one channel.

A MEMS device with teeter-totter structure includes a mobile mass having an area in a plane and a thickness in a direction perpendicular to the plane. The mobile mass is tiltable about a rotation axis extending parallel to the plane and formed by a first and by a second half-masses arranged on opposite sides of the rotation axis. The first and the second masses have a first and a second centroid, respectively, arranged at a first and a second distance b1, b2, respectively, from the rotation axis. First through openings are formed in the first half-mass and, together with the first half-mass, have a first total perimeter p1 in the plane. Second through openings are formed in the second half-mass and, together with the second half-mass, have a second total perimeter p2 in the plane, where the first and the second perimeters p1, p2 satisfy the equation: p1×b1=p2×b2.

An example silicon MEMS resonator device includes a support structure, a resonator element with at least one associated eigenmode of vibration, at least one anchor coupling the resonator element to the support structure, at least one driving electrode, and at least one sense electrode. The resonator element is homogeneously doped with N-type or P-type dopants to a doping concentration that causes a closely temperature-compensated mode in which (i) an absolute value of a first order temperature coefficient of frequency of the resonator element is reduced to a first value below a threshold value and (ii) an absolute value of a second order temperature coefficient of frequency of the resonator element is reduced to about zero. Further, a geometry of the resonator element is chosen such that the absolute value of the first order temperature coefficient of frequency is further reduced to a second value smaller than the first value.

A piezoelectric microelectromechanical systems device can include a cavity bounded by walls and an asymmetrical bimorph structure at least partially spanning the cavity that includes at least a piezoelectric layer and two electrode layers. The electrode layers can have relative thicknesses configured to compensate for expected temperature stress in the bimorph structure. Thus, metals having different thicknesses can be positioned and configured to compensate deflection due to thermal stress of any or all of the piezoelectric layer, the first metal layer, and second metal layer and a substrate. A method for making the piezoelectric microelectromechanical systems device is also provided.

An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

According to one aspect of the invention, there is proposed a capacitive radiofrequency MicroElectroMechanical System or capacitive RF MEMS comprising a metallic membrane suspended above an RF transmission line and resting on ground planes, and exhibiting a lower face, an upper face opposite to the lower face and a first layer comprising a refractory metallic material at least partially covering the upper face of the membrane so as to prevent the heating of the membrane.

A microsystem includes a substrate; a main part connected to the substrate via an anchor; a moving part configured to rotate about an axis of rotation O; a first beam connecting the moving part to the main part, the main direction of said first beam being along a first vector e.sub.j1 having as origin the junction of the moving part with the first beam and in the sense of the main part; a second beam connecting the moving part to the main part, the main direction of the second beam being along a second vector e.sub.j2 having as origin the junction of the moving part with the second beam and in the sense of the main part.