The present disclosure relates to an integrated package having an active area, an electrical routing circuit, an optical routing circuit, and a vacuum vessel. Methods of making such a package are also described herein.

A semiconductor structure is provided. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing structure. The semiconductor layer is over the first substrate. The semiconductor layer has a cavity at least partially through the semiconductor layer. The second substrate is over the semiconductor layer. The second substrate has a through hole. The eutectic sealing structure is on the second substrate and covers the through hole. The eutectic sealing structure comprises a first metal layer and a second metal layer eutectically bonded on the first metal layer. A method for manufacturing a semiconductor structure is also provided.

Various embodiments of the present disclosure are directed towards a method for manufacturing a microelectromechanical systems (MEMS) device. The method includes forming a particle filter layer over a carrier substrate. The particle filter layer is patterned while the particle filter layer is disposed on the carrier substrate to define a particle filter in the particle filter layer. A MEMS substrate is bonded to the carrier substrate. A MEMS structure is formed over the MEMS substrate.

A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

A vacuum package includes a substrate, a pair of through electrodes that penetrates the substrate, each of the pair of the trough electrodes having first end portion, and a getter that is joined to the first end portions of the pair of the through electrodes, and is heated by electronic conduction via the pair of the through electrodes A portion of the getter between the through electrodes is spaced apart from the substrate.

A package which comprises a carrier, a transducer mounted on the carrier and configured for converting between a package-external property and an electric signal, a package housing at least partially housing at least one of the carrier and the transducer, and a sealing which forms at least part of the package housing for sealing between the package and a package-external body.

A micromechanical component includes: a hermetically sealed housing; a first functional element that is situated inside the housing; a first structured electrically conductive layer that contacts the first functional element and that is situated inside the housing; and a second structured electrically conductive layer, the first conductive layer being electrically contacted via the second conductive layer, and the second conductive layer being electrically contacted laterally through the housing via a hermetic through-contacting in the second conductive layer.

A capped micromachined device has a movable micromachined structure in a first hermetic chamber and one or more interconnections in a second hermetic chamber that is hermetically isolated from the first hermetic chamber, and a barrier layer on its cap where the cap faces the first hermetic chamber, such that the first hermetic chamber is isolated from outgassing from the cap.

A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.