A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

A device for reducing package stress sensitivity of a sensor includes one or more anchor points for attaching to a substrate; a rigid frame structure configured to at least partially support the sensor; and a compliant element between each anchor point and the rigid frame structure. Also disclosed is a device for supporting a micro-electro-mechanical (MEMS) sensor comprising four anchor points for attaching to a substrate; a rigid frame structure configured to support the MEMS sensor; and a crab-leg suspension element between each anchor point and the rigid frame structure, wherein the crab-leg suspension element is compliant. A method for reducing package stress sensitivity of a sensor is provided as well.

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

In some embodiments, a sensor includes a microelectromechanical system (MEMS) structure, a cover, and a bump stop. The MEMS structure is configured to move responsive to electromechanical stimuli. The cover is positioned on the MEMS structure. The cover is configured to mechanically protect the MEMS structure. The bump stop is disposed on a substrate and the bump stop is configured to stop the MEMS structure from moving beyond a certain point. The bump stop is further configured to stop the MEMS structure from making physical contact with the substrate. Moreover, the cover is configured to apply a force to the MEMS structure responsive to a voltage being applied to the cover.

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

Systems and methods for multi-sensor integrated sensor devices are provided. In one embodiment, a sensor device comprises: a substrate having a first surface and an opposing second surface; a plurality of sensor cavities recessed into the substrate; a first sensor die sealed within a first sensor cavity of the plurality of sensor cavities at a first atmospheric pressure level; a second sensor die sealed within a second sensor cavity of the plurality of sensor cavities at a second atmospheric pressure level that is a different pressure than the first atmospheric pressure level; a first plurality of direct feedthrough electrical conductors embedded within the substrate coupled to the first sensor die; and a second plurality of direct feedthrough electrical conductors embedded within the substrate coupled to the second sensor die.

Suspending a microelectromechanical system (MEMS) pressure sensing element inside a cavity using spring-like corrugations or serpentine crenellations, reduces thermally-mismatched mechanical stress on the sensing element. Overlaying the spring-like structures and the sensing element with a gel further reduces thermally-mismatched stress and vibrational dynamic stress.

Provided is a package structure, including: an insulating dielectric layer having a first surface and a second surface opposite to each other, wherein at least one first accommodation space running from the first surface to the second surface is formed in the insulating dielectric layer; and at least one conductive post in one-to-one correspondence with the at least one first accommodation space, wherein the conductive post is within the corresponding first accommodation space, a material of the conductive post comprises a non-metallic conductive material, and an absolute value of a difference between a thermal expansion coefficient of the conductive post and a thermal expansion coefficient of the insulating dielectric layer is less than or equal to 810.sup.6/ C.; wherein the at least one conductive post comprises at least one first conductive post, two end faces of the first conductive post are flush with the first surface and the second surface, respectively.