B81B7/0045

Package for semiconductor devices sensitive to mechanical and thermo-mechanical stresses, such as MEMS pressure sensors

A surface mounting device has one body of semiconductor material such as an ASIC, and a package surrounding the body. The package has a base region carrying the body, a cap and contact terminals. The base region has a Young's modulus lower than 5 MPa. For forming the device, the body is attached to a supporting frame including contact terminals and a die pad, separated by cavities; bonding wires are soldered to the body and to the contact terminals; an elastic material is molded so as to surround at least in part lateral sides of the body, fill the cavities of the supporting frame and cover the ends of the bonding wires on the contact terminals; and a cap is fixed to the base region. The die pad is then etched away.

METHOD AND STRUCTURE OF MEMS PLCSP FABRICATION
20170313578 · 2017-11-02 ·

A method and structure for a PLCSP (Package Level Chip Scale Package) MEMS package. The method includes providing a MEMS chip having a CMOS substrate and a MEMS cap housing at least a MEMS device disposed upon the CMOS substrate. The MEMS chip is flipped and oriented on a packaging substrate such that the MEMS cap is disposed above a thinner region of the packaging substrate and the CMOS substrate is bonding to the packaging substrate at a thicker region, wherein bonding regions on each of the substrates are coupled. The device is sawed to form a package-level chip scale MEMS package.

LOW-STRESS PACKAGING STRUCTURE FOR MEMS ACCELERATION SENSOR CHIP
20220306458 · 2022-09-29 ·

A low-stress packaging structure for a MEMS acceleration sensor chip includes a MEMS sensor chip and a chip carrier. Two sides of the bottom of the sensor chip are provided with a first metal layer and a second metal layer respectively. Two sides of a die attach area of the chip carrier are correspondingly provided with a third metal layer and a fourth metal layer. The first metal layer of the sensor chip and the third metal layer of the chip carrier are bonded together. The second metal layer of the sensor chip and the fourth metal layer of the chip carrier are only in contact but not bonded. A groove is arranged between the first metal layer and the second metal layer at the bottom of the sensor chip. A certain gap is defined between the sensor chip and cavity walls of chip carrier.

Sensor Arrangement and Method for Producing a Sensor Arrangement
20220127137 · 2022-04-28 ·

In an embodiment a sensor arrangement includes a substrate, at least one spacer arranged directly onto a surface of the substrate, wherein the spacer comprises a soft material and a sensor chip attached to the substrate by an adhesive, wherein both the at least one spacer and the adhesive are arranged at least partly between the sensor chip and the substrate, and wherein the spacer is adapted and arranged to define a bond line thickness of the adhesive.

Low-stress packaging structure for MEMS acceleration sensor chip
11780727 · 2023-10-10 · ·

A low-stress packaging structure for a MEMS acceleration sensor chip includes a MEMS sensor chip and a chip carrier. Two sides of the bottom of the sensor chip are provided with a first metal layer and a second metal layer respectively. Two sides of a die attach area of the chip carrier are correspondingly provided with a third metal layer and a fourth metal layer. The first metal layer of the sensor chip and the third metal layer of the chip carrier are bonded together. The second metal layer of the sensor chip and the fourth metal layer of the chip carrier are only in contact but not bonded. A groove is arranged between the first metal layer and the second metal layer at the bottom of the sensor chip. A certain gap is defined between the sensor chip and cavity walls of chip carrier.

Stressed decoupled micro-electro-mechanical system sensor

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

Deposition of protective material at wafer level in front end for early stage particle and moisture protection

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

Cover based adhesion force measurement system for microelectromechanical system (MEMS)
10717641 · 2020-07-21 · ·

In some embodiments, a sensor includes a microelectromechanical system (MEMS) structure, a cover, and a bump stop. The MEMS structure is configured to move responsive to electromechanical stimuli. The cover is positioned on the MEMS structure. The cover is configured to mechanically protect the MEMS structure. The bump stop is disposed on a substrate and the bump stop is configured to stop the MEMS structure from moving beyond a certain point. The bump stop is further configured to stop the MEMS structure from making physical contact with the substrate. Moreover, the cover is configured to apply a force to the MEMS structure responsive to a voltage being applied to the cover.

Micro-electro-mechanical device and manufacturing process thereof

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

MICRO-ELECTRO-MECHANICAL DEVICE AND MANUFACTURING PROCESS THEREOF
20200024132 · 2020-01-23 ·

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.