B81B7/0058

MEMs device and electronic device

An MEMS device includes: a first member; a second member forming a sealed space with the first member therebetween; and a third member disposed between the first member and the second member and joined to the first member and the second member, in which the third member has lower rigidity than rigidity of the first member and the second member, and the third member is provided with a communication portion that establishes communication between the sealed space and an external space.

Protective Coating on Trench Features of a Wafer and Method of Fabrication Thereof
20180002165 · 2018-01-04 ·

A coating for protecting a wafer from moisture and debris due to dicing, singulating, or handling the wafer is provided. A semiconductor sensor device comprises a wafer having a surface and at least one trench feature and the protective coating covering the trench feature. The trench feature comprises a plurality of walls and the walls are covered with the protective coating, wherein the walls of the trench feature are formed as a portion of the semiconductor sensor device. The semiconductor sensor device further comprises a patterned mask formed on the wafer before the trench feature is formed, wherein the protective coating is formed directly to the trench feature and the patterned mask. The semiconductor sensor device is selected from a group consisting of a MEMS die, a sensor die, a sensor circuit die, a circuit die, a pressure die, an accelerometer, a gyroscope, a microphone, a speaker, a transducer, an optical sensor, a gas sensor, a bolometer, a giant megnetoresistive sensor (GMR), a tunnel magnetoresistive (TMR) sensor, an environmental sensor, and a temperature sensor.

Sensor package

A sensor device may include a base layer, and an ASIC element disposed on the base layer. The ASIC element may include a plurality of electrical contact points. The sensor device may include a MEMS element. The MEMS element may include a plurality of through-silicon vias. The sensor device may include a plurality of conductive contact elements. Each conductive contact element may be disposed between, and electrically coupling, a respective through-silicon via and a respective electrical contact point. The sensor device may include a protective layer disposed between the ASIC element and the MEMS element. The protective layer may be composed of material(s) having a physical property defined to permit the protective layer to mitigate stress forces directed from the ASIC element to the MEMS element, to prevent corrosion, and/or to prevent leakage current between electrical connections due to pollution and/or humidity.

Sensor Device with Cover Layer
20220396473 · 2022-12-15 · ·

A sensor device includes a substrate, a sensing layer formed over the substrate, and a cover layer at least partially covering the sensing layer and protecting the sensing layer. The cover layer is a porous material or has a plurality of openings.

PROCESS FOR MANUFACTURING A COMBINED MICROELECTROMECHANICAL DEVICE AND CORRESPONDING COMBINED MICROELECTROMECHANICAL DEVICE

A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.

Apparatus having a bondline structure and a diffusion barrier with a deformable aperture

In described examples, a bondline structure is arranged along a periphery of a cavity. The bondline structure extends from a first substrate and is configured to bond with an interposer arranged on a second substrate. A diffusion barrier is arranged on the first substrate for contacting the interposer. The diffusion barrier is arranged to impede a contaminant against migrating from the bondline structure and entering the cavity.

PARTIAL DICING PROCESS FOR WAFER-LEVEL PACKAGING
20230100911 · 2023-03-30 ·

An encapsulation chip manufacturing method includes forming first and second dicing grooves in a surface of a cap wafer and aligning the cap wafer and a device substrate such that the surface of the cap wafer faces a surface of the device substrate. The device substrate includes a device affixed to the surface and a bond pad on the surface and coupled to the device. The cap wafer is bonded to the device substrate and partially diced at the first and second dicing grooves such that the bond pad is exposed. Aligning the cap wafer and the device substrate includes aligning the first and second dicing grooves between the bond pad and a bonding area at which the cap wafer is bonded to the device substrate. A width of the first and second dicing grooves prevents cap wafer dust formed during the partial dicing from falling on the bond pad.

HERMETICALLY SEALED TRANSPARENT CAVITY AND PACKAGE FOR SAME

A method for providing a plurality of hermetically sealed packages, including the steps of: providing at least two substrates including a first substrate and a second substrate, at least one of the at least two substrates being a transparent substrate, the two substrates being arranged directly adjoining each other or on top of one another, the transparent substrate defining a circumferential rim and an upper side of each package, the bottom of the package being defined by the second substrate, a respective contact area being defined at contact surfaces between the two substrates; sealing each functional area in a hermetically tight manner by bonding the two substrates along the contact area of each package; and dicing each package by a cutting step or a separating step, a particle jet being used to abrasively remove a material from the transparent substrate by the particle jet.

STRESS ISOLATED DEVICE PACKAGE AND METHOD OF MANUFACTURE

A device package includes a die that includes a substrate having first and second surfaces. A sensor is formed at a sensor region of the first surface. A trench extends entirely through the substrate between the first and second surfaces, in which the trench at least partially surrounds the sensor region. An isolation material, formed at the first surface, may extend across the trench A ring structure is coupled to the first surface of the substrate to create a first cavity in which the sensor is contained, the ring structure being laterally displaced away from and surrounding the sensor region and the trench. A molded compound body may abut an outer wall of the ring structure. The molded compound body has a second cavity that is concentric with the first cavity to enable fluid communication between the sensor and an environment external to the device package.

Waterproof MEMS Pressure Sensor Package With A Metal Lid And An Embedded ePTFE Filter And Process Of Making
20230087021 · 2023-03-23 ·

Microelectromechanical system (MEMS) packages and methods of making thereof. A MEMS package includes at least one MEMS device disposed on a base substrate and a lid disposed on the base substrate. The lid is configured to enclose the at least one MEMS device. The lid includes a body portion configured to be coupled to the base substrate, a ceiling portion and a membrane. The ceiling portion, the body portion and the ceiling portion form a cavity in which the at least one MEMS device is enclosed. The membrane is configured to be in contact with the ceiling portion. The membrane is formed from a filtering fabric and is configured to substantially block one or more of liquids and contaminants from passing into the cavity.