B81B7/0064

EMI reduction in piezoelectric micromachined ultrasound transducer array

A piezoelectric micromachined ultrasound transducer (PMUT) array may comprise PMUT devices with respective piezoelectric layers and electrode layers. Parasitic capacitance can be reduced when an electrode layer is not shared across PMUT devices but may expose the devices to electromagnetic interference (EMI). A conductive layer located within the structural layer or on a shared plane with the electrode layers may reduce EMI affecting the PMUT array operation.

Device package with reduced radio frequency losses

A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.

MICROPHONE ASSEMBLY WITH DISTURBANCE COMPENSATION
20230112042 · 2023-04-13 ·

The present disclosure relates to a transducer assembly including a transducer having a movable member, and a servo-loop controller configured to compensate for effects of a disturbance on the transducer assembly by adjusting a bias voltage applied to the transducer. A servo-loop controller having a smaller bandwidth for out-of-band disturbances than for in-band disturbances and configured to control the bias voltage based on a feedback signal generated by a sensor that detects an effect of the disturbance on the transducer assembly. The transducer assembly can be implemented as a microphone or a speaker among other sensors and actuators.

PRESSURE SENSOR STRUCTURE, PRESSURE SENSOR DEVICE, AND METHOD OF MANUFACTURING PRESSURE SENSOR STRUCTURE
20230146158 · 2023-05-11 ·

A pressure sensor structure includes a sensor body including a diaphragm plate that functions as a sense electrode, a base electrode that faces the diaphragm plate, and a sidewall layer maintaining a gap between the diaphragm plate and the base electrode, and a conductive guard substrate to support the sensor body. The sidewall layer includes a guard electrode layer and upper and lower electrically insulating layers to electrically insulate the guard electrode layer. An electrically insulating layer is between the guard substrate and the sensor body to electrically insulate the guard substrate. The guard substrate is electrically connected to the guard electrode layer to function as a guard electrode together with the guard electrode layer.

Integral Metallic Joint Based on Electrodeposition
20170359924 · 2017-12-14 ·

An electronic assembly, including an encasement joined from at least two casing parts, wherein at least one gap region between two mutually adjoining casing parts is hermetically sealed by a metal layer that is electrodeposited onto the sections of the adjoining casing parts abutting the gap region and bridges the gap region.

Semiconductor Device and Method of Making a MEMS Semiconductor Package
20230192478 · 2023-06-22 · ·

A semiconductor device includes a substrate. A first semiconductor die including a microelectromechanical system (MEMS) is disposed over the substrate. A lid is disposed on the substrate around the first semiconductor die. A first encapsulant is deposited over the substrate and lid. A second encapsulant is deposited into the lid.

Cap and substrate electrical connection at wafer level

A cap and substrate having an electrical connection at a wafer level includes providing a substrate and forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate. An electrically conductive path to the ground structure is formed in the substrate. A top cap is then provided, wherein the top cap includes an electrically conductive surface. The top cap is bonded to the substrate so that the electrically conductive surface of the top cap is electrically coupled to the path to the ground structure.

Can thickness and material combinations for improved radio-frequency microphone performance

A microphone assembly includes a substrate, an acoustic transducer, an integrated circuit, and a cover couples to the substrate to enclose a back volume of the microphone assembly in which the acoustic transducer and the integrated circuit are disposed. The acoustic transducer includes a back plate and a diaphragm oriented parallel to the back plate disposed over an aperture in the substrate to receive acoustic signals. The cover is a metallic material with a thickness and a corresponding thermal diffusivity to attenuate incoming radio-frequency signals. The attenuation of the radio-frequency signals prevents ambient noise detectable by the microphone assembly.

INTEGRATED CIRCUITS HAVING SHIELDED MEMS DEVICES AND METHODS FOR FABRICATING SHIELDED MEMS DEVICES

Integrated circuits having shielded micro-electromechanical system (MEMS) devices and method for fabricating shielded MEMS devices are provided. In an example, an integrated circuit having a shielded MEMS device includes a substrate, a ground plane including conductive material over the substrate, and a dielectric layer over the ground plane. The integrated circuit further includes a MEMS device over the ground plane. Also, the integrated circuit includes a conductive pillar through the dielectric layer and in contact with the ground plane. The integrated circuit includes a metallic thin film over the MEMS device and in contact with the conductive pillar, wherein the metallic thin film, the conductive pillar and the ground plane form an electromagnetic shielding structure surrounding the MEMS device. Further, the integrated circuit includes an acoustic shielding structure over the substrate and adjacent the electromagnetic shielding structure.

SEMICONDUCTOR STRUCTURES

The present application relates to structures for supporting mechanical, electrical and/or electromechanical components, devices and/or systems and to methods of fabricating such structures. The application describes a primary die comprising an aperture extending through the die. The aperture is suitable for receiving a secondary die. A secondary die may be provided within the aperture of the primary die.