B81C1/00674

Systems, methods, and devices for mechanical isolation or mechanical damping of microfabricated inertial sensors

MEMS-based sensors can experience undesirable signal frequencies caused by vibrations, shocks, and accelerations, among other phenomena. A microisolation system can isolate individual MEMS-based sensors from undesirable signal frequencies and shocks. An embodiment of a system for microisolation of a MEMS-based sensor can include an isolation platform connected to one or more folded springs. Another embodiment of a system for microisolation can include an isolation platform and/or a frame connected to a mesh damping mechanism. In at least one embodiment, a mesh damping mechanism can be a microfibrous metal mesh damper. In one or more embodiments, a system for microisolation can include an isolation platform connected to one or more L-shaped springs, and a thickness of the one or more L-shaped springs can be less than a thickness of the isolation platform.

MEMS cavity substrate
09828238 · 2017-11-28 · ·

In accordance with an example embodiment of this disclosure, a micro-electro-mechanical system (MEMS) device comprises a substrate, a CMOS die, and a MEMS die, each of which comprises a top side and a bottom side. The bottom side of the CMOS die is coupled to the top side of the substrate, and the MEMS die is coupled to the top side of the CMOS die, and there is a cavity positioned between the CMOS die and the substrate. The cavity may be sealed by a sealing substance, and may be filled with a filler substance (e.g., an adhesive) that is different than the sealing substance (e.g., a gaseous or non-gaseous substance). The cavity may be fully or partially surrounded by one or more downward-protruding portions of the CMOS die and/or one or more upward-protruding portions of the substrate.

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
20170267517 · 2017-09-21 ·

According to one embodiment, an electronic device includes a base region, an element portion located on the base region, the element portion including a movable portion, and a protective film overlying the element portion and forming a cavity on an inner side of the protective film. The protective film includes a first protective layer and a second protective layer located on the first protective layer. A hole extends in a direction parallel to a main surface of the base region, and the second protective layer covers the hole.

FORMING A PASSIVATION COATING FOR MEMS DEVICES

In described examples, a MEMS device component includes a passivation layer formed from a vapor and/or a liquid compound that may include precursors. The compound may contain amino acid, antioxidants, nitriles or other compounds, and may be disposed on a surface of the MEMS device component and/or a package or package portion thereof. If the compound is a precursor, it may be treated to cause formation of the passivation layer from the precursor.

Methods of manufacture of microisolators and devices for mechanical isolation or mechanical damping of microfabricated inertial sensors

MEMS-based sensors can experience undesirable signal frequencies caused by vibrations, shocks, and accelerations, among other phenomena. A microisolation system can isolate individual MEMS-based sensors from undesirable signal frequencies and shocks. An embodiment of a system for microisolation of a MEMS-based sensor can include an isolation platform connected to one or more folded springs. Another embodiment of a system for microisolation can include an isolation platform and/or a frame connected to a mesh damping mechanism. In at least one embodiment, a mesh damping mechanism can be a microfibrous metal mesh damper. In one or more embodiments, a system for microisolation can include an isolation platform connected to one or more L-shaped springs, and a thickness of the one or more L-shaped springs can be less than a thickness of the isolation platform.

Reliable deposition of thin parylene

Apparatus, system, and method of depositing thin and ultra-thin parylene are described. In an example, a core deposition chamber is used. The core deposition chamber includes a base and a rigid, removable cover configured to mate and seal with the base to create the core deposition chamber and to define an inside and an outside of the core deposition chamber. The core deposition chamber also includes a conduit through a top of the cover. The conduit has a lumen connecting the inside to the outside of the core deposition chamber. The lumen has a length and a cross-section. The cross-section has a width between 50 μm and 6000 μm. The length is less than 140 times the cross-section width. The core deposition chamber can be placed in an outer deposition chamber and can achieve parylene deposition less than 1 μm thick inside the core deposition chamber.

Systems, methods, and devices for mechanical isolation or mechanical damping of microfabricated inertial sensors

MEMS-based sensors can experience undesirable signal frequencies caused by vibrations, shocks, and accelerations, among other phenomena. A microisolation system can isolate individual MEMS-based sensors from undesirable signal frequencies and shocks. An embodiment of a system for microisolation of a MEMS-based sensor can include an isolation platform connected to one or more folded springs. Another embodiment of a system for microisolation can include an isolation platform and/or a frame connected to a mesh damping mechanism. In at least one embodiment, a mesh damping mechanism can be a microfibrous metal mesh damper. In one or more embodiments, a system for microisolation can include an isolation platform connected to one or more L-shaped springs, and a thickness of the one or more L-shaped springs can be less than a thickness of the isolation platform.

A MICROFLUIDIC SENSOR

A microfluidic sensor comprising: a first substrate; a second substrate; a cavity formed between the first substrate and the second substrate, the cavity comprising a reservoir portion and a channel portion extending from the reservoir portion; a capacitive element disposed between the first substrate and the second substrate, the capacitive element being at least partially disposed in the channel portion of the cavity; and a dielectric sensing liquid provided in the reservoir portion. Upon application of a force to the first substrate adjacent the reservoir portion, the reservoir portion is configured to deform and displace the sensing liquid along the channel portion, so as to change the capacitance of the capacitive element within the channel portion.

Method of depositing nanotwinned nickel-molybdenum-tungsten alloys

The present invention is directed to the synthesis of metallic nickel-molybdenum-tungsten films and coatings with direct current sputter deposition, which results in fully-dense crystallographically textured films that are filled with nano-scale faults and twins. The as-deposited films exhibit linear-elastic mechanical behavior and tensile strengths above 2.5 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultra-high strength is attributed to a combination of solid solution strengthening and the presence of the dense nano-scale faults and twins. These films also possess excellent thermal and mechanical stability, high density, low CTE, and electrical properties that are attractive for next generation metal MEMS applications. Deposited as coatings these films provide protection against friction and wear. The as-deposited films can also be heat treated to modify the internal microstructure and attendant mechanical properties in a way that provides a desired balance of strength and toughness.

METHOD OF DEPOSITING NANOTWINNED NICKEL-MOLYBDENUM-TUNGSTEN ALLOYS

The present invention is directed to the synthesis of metallic nickel-molybdenum-tungsten films and coatings with direct current sputter deposition, which results in fully-dense crystallographically textured films that are filled with nano-scale faults and twins. The as-deposited films exhibit linear-elastic mechanical behavior and tensile strengths above 2.5 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultra-high strength is attributed to a combination of solid solution strengthening and the presence of the dense nano-scale faults and twins. These films also possess excellent thermal and mechanical stability, high density, low CTE, and electrical properties that are attractive for next generation metal MEMS applications. Deposited as coatings these films provide protection against friction and wear. The as-deposited films can also be heat treated to modify the internal microstructure and attendant mechanical properties in a way that provides a desired balance of strength and toughness.