A method of manufacturing a semiconductor structure includes following operations. A first substrate is provided. A plate is formed over the first substrate. The plate includes a first tensile member, a second tensile member, a semiconductive member between the first tensile member and the second tensile member, and a plurality of apertures penetrating the first tensile member, the semiconductive member and the second tensile member. A membrane is formed over and separated from the plate. The membrane include a plurality of holes. A plurality of conductive plugs passing through the plate or membrane are formed. A plurality of semiconductive pads are formed over the plurality of conductive plugs. The plate is bonded to a second substrate. The second substrate includes a plurality of bond pads, and the semiconductive pads are in contact with the bond pads.

The present disclosure relates to a microelectromechanical systems (MEMS) apparatus. The MEMS apparatus includes a base substrate and a conductive routing layer disposed over the base substrate. A bump feature is disposed directly over the conductive routing layer. Opposing outermost sidewalls of the bump feature are laterally between outermost sidewalls of the conductive routing layer. A MEMS substrate is bonded to the base substrate and includes a MEMS device directly over the bump feature. An anti-stiction layer is arranged on one or more of the bump feature and the MEMS device.

A method of forming an ultrasonic transducer device includes forming an insulating layer having topographic features over a lower transducer electrode layer of a substrate; forming a conformal, anti-stiction layer over the insulating layer such that the conformal layer also has the topographic features; defining a cavity in a support layer formed over the anti-stiction layer; and bonding a membrane to the support layer.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

The present disclosure provides a method for manufacturing a CMOS-MEMS structure. The method includes etching a cavity on a first surface of a cap substrate; bonding the first surface of the cap substrate with a sensing substrate; thinning a second surface of the sensing substrate, the second surface being opposite to a third surface of the sensing substrate bonded to the cap substrate; etching the second surface of the sensing substrate; patterning a portion of the second surface of the sensing substrate to form a plurality of bonding regions; depositing an eutectic metal layer on the plurality of bonding regions; etching a portion of the sensing substrate under the cavity to form a movable element; and bonding the sensing substrate to a CMOS substrate through the eutectic metal layer.

Provided are a method for preparing a silicon wafer with a rough surface and a silicon wafer, for solving the problem that a viscous force is likely to be generated when a smooth surface of the silicon wafer approaches another film layer. The method includes: depositing a porous oxide film layer on a surface of the first silicon planar layer that has been subjected to planar planarization, and then etching the porous oxide film layer by XeF.sub.2 vapor etching, during which XeF.sub.2 gas passes through the porous oxide film layer to etch the first silicon planar layer in an irregular way. Therefore, the first silicon planar layer has a greater surface roughness. When the silicon wafer approaches to another film layer, the viscous force generated therebetween is reduced, improving the sensitivity of the MEMS device and reducing the probability of out-of-work MEMS devices.

In described examples, a MEMS device component includes a passivation layer formed from a vapor and/or a liquid compound that may include precursors. The compound may contain amino acid, antioxidants, nitriles or other compounds, and may be disposed on a surface of the MEMS device component and/or a package or package portion thereof. If the compound is a precursor, it may be treated to cause formation of the passivation layer from the precursor.

A method of manufacturing a semiconductor structure includes following operations. A first substrate is provided. A plate is formed over the first substrate. The plate includes a first tensile member, a second tensile member, a semiconductive member between the first tensile member and the second tensile member, and a plurality of apertures penetrating the first tensile member, the semiconductive member and the second tensile member. A membrane is formed over and separated from the plate. The membrane include a plurality of holes. A plurality of conductive plugs passing through the plate or membrane are formed. A plurality of semiconductive pads are formed over the plurality of conductive plugs. The plate is bonded to a second substrate. The second substrate includes a plurality of bond pads, and the semiconductive pads are in contact with the bond pads.

A method of forming an ultrasonic transducer device involves depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.