A MEMS acoustic transducer provided with: a substrate of semiconductor material, having a back surface and a front surface opposite with respect to a vertical direction; a first cavity formed within the substrate, which extends from the back surface to the front surface; a membrane which is arranged at the upper surface, suspended above the first cavity and anchored along a perimeter thereof to the substrate; and a combfingered electrode arrangement including a number of mobile electrodes coupled to the membrane and a number of fixed electrodes coupled to the substrate and facing respective mobile electrodes for forming a sensing capacitor, wherein a deformation of the membrane as a result of incident acoustic pressure waves causes a capacitive variation of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane and extends parallel thereto.

A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided by the embodiments of the present disclosure. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; and a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, and the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, and an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate.

A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate. The micro-nano channels have a high resolution or an ultra-high resolution, and have different sizes and shapes.

A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided by the embodiments of the present disclosure. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; and a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, and the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, and an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate.

In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

A MEMS acoustic transducer provided with: a substrate of semiconductor material, having a back surface and a front surface opposite with respect to a vertical direction; a first cavity formed within the substrate, which extends from the back surface to the front surface; a membrane which is arranged at the upper surface, suspended above the first cavity and anchored along a perimeter thereof to the substrate; and a combfingered electrode arrangement including a number of mobile electrodes coupled to the membrane and a number of fixed electrodes coupled to the substrate and facing respective mobile electrodes for forming a sensing capacitor, wherein a deformation of the membrane as a result of incident acoustic pressure waves causes a capacitive variation of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane and extends parallel thereto.

A method for forming a MEMS structure includes forming, on a MEMS substrate, an interconnect structure having conductive lines and a first conductive plug of a semiconductor material, forming an etch stop layer on the interconnect structure, forming a dielectric layer over the etch stop layer, bonding a silicon substrate over the dielectric layer, forming a second and third conductive plugs of the semiconductor material in the silicon substrate, wherein the second conductive plug is configured to be electrically coupled with the first conductive plug and third conductive plug is configured to function as an anti-stiction bump, forming a MEMS device electrically coupled with the second conductive feature, and forming a bonding pad on the silicon substrate and surrounded by the second conductive plug.

Described herein are manufacturing techniques for achieving stress isolation in microelectromechanical systems (MEMS) devices that involve isolation trenches formed from the backside of the substrate. The techniques described herein involve etching a trench in the bottom side of the substrate subsequent to forming a MEMS platform, and processing the MEMS platform to form a MEMS device on the top side of the substrate subsequent to etching the trench.

A scanning device includes a frame, having a central opening, and an array including a plurality of parallel mirrors contained within the central opening of the frame. Hinges respectively connect the mirrors to the frame and define respective, mutually-parallel axes of rotation of the mirrors relative to the frame. A main drive applies a driving force to the array so as to drive an oscillation of the mirrors about the hinges at a resonant frequency of the array. A sensor is configured to detect a discrepancy in a synchronization of the oscillation among the mirrors in the array, and an adjustment circuit applies a corrective signal to at least one of the mirrors in order to alleviate the detected discrepancy.

In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.