A MEMS infrared sensing device includes a substrate and an infrared sensing component. The infrared sensing component is provided above the substrate. The infrared sensing component includes a sensing plate and at least one supporting element. The sensing plate includes at least one infrared absorbing layer, an infrared sensing layer, a sensing electrode and a plurality of metallic elements. The sensing plate has a plurality of openings. The metallic elements respectively surround the openings. The sensing electrode is connected with the infrared sensing layer, and the metallic elements are spaced apart from one another. The supporting element connecting the sensing plate with the substrate.

The present invention relates to a method for manufacturing a membrane component with a membrane made of a thin film (<1 μm, thin-film membrane). The membrane component can be used in microelectromechanical systems (MEMS). The invention is intended to provide a method for manufacturing a membrane component, the membrane being manufacturable with high-precision membrane dimensions and a freely selectable membrane geometry. This is achieved by a method comprising . . . providing a semiconductor wafer (100) with a first layer (116), a second layer (118) and a third layer (126). Depositing (12) a first masking layer (112) on the first layer (116), the first masking layer (112) defining a first selectively processable area (114) for determining a geometry of the membrane (M.sub.1). Forming (13) a first recess (120) by anisotropic etching (13) of the first layer (116) and removing the first masking layer (112). Introducing (14) a material (122) in the first recess (120) and depositing (15) a membrane layer (124) on the first layer (116) with the introduced material (122). Depositing on the third layer (126) a second masking layer that defines a second selectively processable area. Forming a second recess by anisotropic etching of the third layer (126) and of the second layer (118) up to the first layer (116). Removing the second masking layer; and isotropically etching (18) the first layer (116), the isotropic etching being limited by the membrane layer (124) and by the introduced material (122), so that the membrane (M.sub.1) will be exposed.

A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.

A method of forming an ultrasonic transducer device includes forming an insulating layer having topographic features over a lower transducer electrode layer of a substrate; forming a conformal, anti-stiction layer over the insulating layer such that the conformal layer also has the topographic features; defining a cavity in a support layer formed over the anti-stiction layer; and bonding a membrane to the support layer.

A ultrasonic transducer device includes a transducer bottom electrode layer disposed over a substrate, and a plurality of vias that electrically connect the bottom electrode layer with the substrate, wherein substantially an entirety of the plurality of vias are disposed directly below a footprint of a transducer cavity. Alternatively, the transducer bottom electrode layer includes a first metal layer in contact with the plurality of vias and a second metal layer formed on the first metal layer, the first metal layer including a same material as the plurality of vias.

A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.

The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a cap substrate is bonded to a device substrate. The cap substrate comprises a cap substrate bonded to a device substrate. The cap substrate comprises a MEMS trench, a scribe trench, and an edge trench respectively recessed from at a front-side surface of the cap substrate. A stopper is disposed within the MEMS trench and raised from a bottom surface of the MEMS trench.

In some embodiments, the present disclosure relates to a microelectromechanical system (MEMS) comb actuator including a comb structure. The comb structure includes a support layer having a first material and a plurality of protrusions extending away from a first surface of the support layer in a first direction. The plurality of protrusions are also made of the first material. The plurality of protrusions are separated along a second direction parallel to the first surface of the support layer. The MEMS comb actuator may further include a dielectric liner structure that continuously and completely covers the first surface of the support layer and outer surfaces of the plurality of protrusions. The dielectric liner structure includes a connective portion that continuously connects topmost surfaces of at least two of the plurality of protrusions.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.