A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.

Devices and methods for controlling molecular transport are disclosed herein. The devices include a membrane having a plurality of nanochannels extending therethrough. The membrane has an inner electrically conductive layer and an outer dielectric layer. The outer dielectric layer creates an insulative barrier between the electrically conductive layer and the contents of the nanochannels. At least one electrical contact region is positioned on a surface of the membrane. The electrical contact region exposes the electrically conductive layer of the membrane for electrical coupling to external electronics. When the membrane is at a first voltage, molecules flow through the nanochannels at a first release rate. When the membrane is at a second voltage, charge accumulation within the nanochannels modulates the flow of molecules through the nanochannels to a second release rate that is different than the first release rate. Methods of fabricating devices for controlling molecular transport are also disclosed herein.

The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least; a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411″, 411″) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) c) a step of removing (461, 462) the modified zones (411, 411′, 41″), the removal comprising a step of etching the modified zones (411, 411′, 411″) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.

The present invention relates to a method for manufacturing a membrane component with a membrane made of a thin film (<1 μm, thin-film membrane). The membrane component can be used in microelectromechanical systems (MEMS). The invention is intended to provide a method for manufacturing a membrane component, the membrane being manufacturable with high-precision membrane dimensions and a freely selectable membrane geometry. This is achieved by a method comprising . . . providing a semiconductor wafer (100) with a first layer (116), a second layer (118) and a third layer (126). Depositing (12) a first masking layer (112) on the first layer (116), the first masking layer (112) defining a first selectively processable area (114) for determining a geometry of the membrane (M.sub.1). Forming (13) a first recess (120) by anisotropic etching (13) of the first layer (116) and removing the first masking layer (112). Introducing (14) a material (122) in the first recess (120) and depositing (15) a membrane layer (124) on the first layer (116) with the introduced material (122). Depositing on the third layer (126) a second masking layer that defines a second selectively processable area. Forming a second recess by anisotropic etching of the third layer (126) and of the second layer (118) up to the first layer (116). Removing the second masking layer; and isotropically etching (18) the first layer (116), the isotropic etching being limited by the membrane layer (124) and by the introduced material (122), so that the membrane (M.sub.1) will be exposed.

A package structure of a micro speaker is provided. The package structure includes a substrate, a diaphragm, a coil, an etch stop layer, a carrier board, a permanent magnetic element, and package lid. The substrate has a hollow chamber. The diaphragm is suspended over the hollow chamber. The coil is embedded in the diaphragm. The etch stop layer is positioned below the coil and overlaps the coil in the direction that is perpendicular to the top surface of the diaphragm. The etch stop layer is made of a metal material. The carrier board is disposed on the bottom surface of the substrate. The permanent magnetic element is disposed on the carrier board and in the hollow chamber. The package lid is wrapped around the substrate and the diaphragm, and has a lid opening that exposes a portion of the top surface of the diaphragm.

The invention relates to a method for fabricating a detection device, comprising the following steps: producing thermal detectors and an encapsulating structure by way of mineral sacrificial layers; partially removing the mineral sacrificial layers, by wet chemical etching in an acid medium, so as to free the thermal detectors and to obtain a peripheral wall, and to free an upper portion of the encapsulating thin layer; the peripheral wall then having a lateral recess resulting in a vertical enlargement of the cavity, between the readout substrate and the upper portion, this lateral recess defining an intermediate area; producing reinforcing pillars, arranged in the intermediate area around the matrix-array of thermal detectors.

A method for producing a cavity in a substrate composed of hard brittle material is provided. A laser beam of an ultrashort pulse laser is directed a side surface of the substrate and is concentrated by a focusing optical unit to form an elongated focus in the substrate. Incident energy of the laser beam produces a filament-shaped flaw in a volume of the substrate. The filament-shaped flaw extends into the volume to a predetermined depth and does not pass through the substrate. To produce the filament-shaped flaw, the ultrashort pulse laser radiates in a pulse or a pulse packet having at least two successive laser pulses. After at least two filament-shaped flaws are introduced, the substrate is exposed to an etching medium which removes material of the substrate and widens the at least two filament-shaped flaws to form filaments. At least two filaments are connected to form a cavity.

Methods for fabricating MEMS tuning fork gyroscope sensor system using silicon wafers. This provides the possibly to avoid glass. The sense plates can be formed in a device layer of a silicon on insulator (SOI) wafer or in a deposited polysilicon layer in a few examples.

A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.

A micromechanical component for a sensor device or microphone device. The micromechanical component includes a diaphragm with a diaphragm inner side to which an electrode structure is directly or indirectly connected; and a cavity that is formed at least in a volume that is exposed by at least one removed area of at least one sacrificial layer. At least one residual area made of at least one electrically insulating sacrificial layer material of the at least one sacrificial layer is also present at the micromechanical component, and including at least one insulation area made of at least one electrically insulating material that is not the same as the electrically insulating sacrificial layer material. The electrode structure is electrically insulated from the diaphragm, and/or the at least one residual area of the at least one sacrificial layer is delimited from the cavity, using the at least one insulation area.