B81C2201/0163

Manufacturing method of semiconductor structure

A method of manufacturing a semiconductor structure includes following operations. A first substrate is provided. A plate is formed over the first substrate. The plate includes a first tensile member, a second tensile member, a semiconductive member between the first tensile member and the second tensile member, and a plurality of apertures penetrating the first tensile member, the semiconductive member and the second tensile member. A membrane is formed over and separated from the plate. The membrane include a plurality of holes. A plurality of conductive plugs passing through the plate or membrane are formed. A plurality of semiconductive pads are formed over the plurality of conductive plugs. The plate is bonded to a second substrate. The second substrate includes a plurality of bond pads, and the semiconductive pads are in contact with the bond pads.

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

A method of manufacturing a semiconductor structure includes following operations. A first substrate is provided. A plate is formed over the first substrate. The plate includes a first tensile member, a second tensile member, a semiconductive member between the first tensile member and the second tensile member, and a plurality of apertures penetrating the first tensile member, the semiconductive member and the second tensile member. A membrane is formed over and separated from the plate. The membrane include a plurality of holes. A plurality of conductive plugs passing through the plate or membrane are formed. A plurality of semiconductive pads are formed over the plurality of conductive plugs. The plate is bonded to a second substrate. The second substrate includes a plurality of bond pads, and the semiconductive pads are in contact with the bond pads.

MECHANICALLY COUPLED PIEZOELECTRIC MEMS MICROPHONE
20230303387 · 2023-09-28 ·

There is provided a piezoelectric microelectromechanical systems microphone comprising a sensor including at least one piezoelectric layer, at least one constraint in contact with the sensor at a position, such that the sensor is supported by the at least one constraint, and such that the sensor that the sensor has a membrane region to one side of the at least one constraint and a cantilevered region to the other side of the at least one constraint and a cavity defined at least partially by the at least one constraint. There is also provided a method of manufacturing the microphone.

Manufacturing method of semiconductor structure

A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

TUNING ADHESION AT CONTACTING DEVICE INTERFACES: GEOMETRIC TOOLS FOR MINIMIZING SURFACE FOULING

The present invention relates to substrates and composites having dynamic, reversible micron-level luminal surface deformation including texture or geometric instabilities, e.g., surface wrinkling and folding. The surface deformation and its reversal to the original surface form or to another, different surface form, is effective to reduce or prevent surface fouling and, more particularly, in certain applications, to reduce or prevent unwanted platelet adhesion and thrombus formation. The substrates and composites include a wide variety of designs and, more particularly, biomedical-related designs, such as, synthetic vascular graft or patch designs.

MANUFACTURING METHOD OF SEMICONDUCTOR STRUTURE

A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

Method of manufacturing a remote-controlled micro-scale three-dimensional self-assembly

Methods of manufacturing a 3D micro-scale structure. A 2D net including a plurality of panels and a plurality of hinges is provided. The panels are arranged in a pattern. The hinges interconnect immediately adjacent ones of the panels within the pattern. An energy source remote from the 2D net is powered to deliver energy to the 2D net. The delivered energy triggers the 2D net to self-fold into a 3D micro-scale structure. The delivered energy creates an eddy current within at least one component of the 2D net, with the eddy current generating heat sufficient to melt at least one of the hinges. The melting hinge causes the corresponding panels to fold or pivot relative to one another. In some embodiments, the energy source is a microwave energy source. In other embodiments, the energy source delivers a magnetic field.

Semiconductor structure and manufacturing method thereof

A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures; a membrane disposed opposite to the plate and including a plurality of corrugations, and a conductive plug extending through the plate and the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

Manufacturing methods to apply stress engineering to self-aligned multi-patterning (SAMP) processes

Embodiments are disclosed for processing microelectronic workpieces to apply stress engineering to self-aligned multi-patterning (SAMP) processes. The disclosed processing methods utilize stress in a substrate in a SAMP process to improve resulting pattern parameters. Initially, a high stress film is deposited on the frontside and the backside of the substrate, and the high stress film provides biaxial stress to the substrate due to the deposition process for the high stress film. Next, a SAMP process is performed to form spacers in a spacer pattern. This spacer pattern is then transferred to underlying layers to form a patterned structure. The high stress film provides axial stress in at least one direction along a portion of the patterned structure during the pattern transfer thereby improving resulting pattern formation.

REMOTE-CONTROLLED MICRO-SCALE THREE-DIMENSIONAL SELF-ASSEMBLY

Methods of manufacturing a 3D micro-scale structure. A 2D net including a plurality of panels and a plurality of hinges is provided. The panels are arranged in a pattern. The hinges interconnect immediately adjacent ones of the panels within the pattern. An energy source remote from the 2D net is powered to deliver energy to the 2D net. The delivered energy triggers the 2D net to self-fold into a 3D micro-scale structure. The delivered energy creates an eddy current within at least one component of the 2D net, with the eddy current generating heat sufficient to melt at least one of the hinges. The melting hinge causes the corresponding panels to fold or pivot relative to one another. In some embodiments, the energy source is a microwave energy source. In other embodiments, the energy source delivers a magnetic field.