Patent classifications
B81C2201/0169
SYSTEMS AND METHODS FOR STIFFNESS TRIMMING OF RESONATORS
Embodiments of the present disclosure can include a method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and a plurality of loading elements layered on a surface of the substrate, the method comprising: selecting a first loading element of the plurality of loading elements, the first loading element being layered on a surface of a region of interest of the substrate; heating the first loading element and substrate within the region of interest to a predetermined temperature using an optical energy source, causing the first loading element to diffuse into the substrate; and cooling the region of interest to form a eutectic composition layer bonding the loading element and the substrate within the region of interest.
Substrate for diaphragm-type resonant MEMS devices, diaphragm-type resonant MEMS device and method for manufacturing same
A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion R.sub.2 of the film thickness t.sub.2 of the second silicon oxide film with respect to the sum of the film thickness t.sub.1 of the first silicon oxide film and the film thickness t.sub.2 of the second silicon oxide film satisfies the following condition:
0.10 mt.sub.12.00 m; and
R.sub.20.70.
Methods of forming microstructure and electronic device having moveable component
A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on a portion of at least four different surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.
Method for fabricating a microfluidic device
A method for fabricating a microfluidic device includes providing an assembly that includes a first silicon substrate having a hydrophilic silicon oxide top surface that includes a microfluidic channel and a second silicon substrate having a hydrophilic silicon oxide bottom surface directly bonded on the top surface of the first silicon substrate, the second silicon substrate including fluidic access holes giving fluidic access to the microfluidic channel. The method also includes exposing the assembly to oxidative species including one or more oxygen atoms and to heat so as to form silicon oxide at a surface of the access holes and of the microfluidic channel.
Mems platform for thin film nanomechanics characterization
A micro-electromechanical system (MEMS) device includes a silicon substrate; and a Tantalum (Ta) layer comprising a first portion and a second portion, a first portion being suspended over the silicon substrate and configured to move relative to the silicon substrate, and the second portion of the structure being coupled to the silicon substrate and fixed in place relative to the silicon substrate.
METHOD OF MANUFACTURING A LAYERED STRUCTURE FOR A MEMS APPARATUS AND MEMS APPARATUS HAVING SUCH A LAYERED STRUCTURE
The present disclosure relates to a method of manufacturing a layered structure for a MEMS apparatus, a layered structure manufactured by the method, and a MEMS apparatus 200 (300, 400, 500) comprising the layered structure. For the layered structure, a high-temperature curing step is provided in the manufacturing process, for example, after structuring the functional layer 3. The structured regions and trenches of the functional layer 3 and in particular the spring structure formed in the functional layer 3 have smoothened side walls and/or rounded corners in regions 3a after the curing step, so that their fracture limits can thus be increased and early fractures of the functional layer 3 during operation of the MEMS apparatus 200 (300, 400, 500) can be avoided.
Forming a Bonded Interface Using Plasma-Activated Surfaces
In a general aspect, a bonded interface in a vapor cell is formed using plasma-activated surfaces. In some aspects, manufacturing a vapor cell includes obtaining a dielectric body and an optical window. The dielectric body has a surface that defines an opening to a cavity in the dielectric body, and the cavity is configured to contain a vapor. The surface of the dielectric body and a surface of the optical window are contacted to form a seal around the opening to the cavity. The seal includes a metal oxynitride layer that is disposed along an interface between the surfaces of the dielectric body and the optical window. In certain cases, the seal is formed at a temperature no greater than 150 C.