A method for manufacturing a microelectromechanical systems microphone comprises depositing a membrane on a first sacrificial layer on a substrate, releasing the membrane by removing the first sacrificial layer, depositing a resist layer on the membrane, and patterning the resist layer to expose the membrane, such that at least one section of resist layer remains at at least one edge of the membrane to form an anchor. A microphone manufactured by this method is also provided. There is also provided a method for manufacturing a microelectromechanical systems microphone comprising depositing a membrane on a first sacrificial layer deposited on a substrate, releasing the membrane by removing at least the first sacrificial layer, depositing a resist layer on membrane, patterning the resist layer to expose an edge of the membrane, and forming an anchor at the exposed edge of the membrane. A microphone manufactured by this method is also provided.

A MEMS pump includes a first substrate, a first oxide layer, a second substrate, a second oxide layer, a third substrate and a piezoelectric element sequentially stacked to form a modular structure. The first substrate has an inlet aperture. The first oxide layer has at least one fluid inlet channel and a convergence chamber. One end of the fluid inlet channel is in communication with the convergence chamber and the other end of the fluid inlet channel is in communication with the inlet aperture. The second substrate has a through hole misaligned with the inlet aperture and in communication with the convergence chamber. The second oxide layer has a gas chamber with a concave central portion. The third substrate has a plurality of gas flow channels misaligned with the through hole. The modular structure has a length, a width and a height.

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

A terahertz sensor based on a dielectric metasurface, including a sensing element, and a thermosensitive circuit connected to the sensing element. The sensing element is composed of a cylindrical semiconductor doped with a conductive material. The conductive material is configured to change conductivity of the cylindrical semiconductor to enable the cylindrical semiconductor to absorb electromagnetic waves in terahertz region.

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

A microfluidic device includes a silicon device and a metallic component. The silicon device and the metallic component are attached by preparing a surface of a silicon device to be solderable, preparing a corresponding surface of a metallic component to be solderable, and soldering the prepared surface of the silicon device to the corresponding prepared surface of the metallic component with a solder of a pre-defined composition and thickness to accommodate strain due to co-efficient of thermal expansion (CTE) mismatch between the silicon device and the metallic component.

In an example, a method includes depositing an organic polymer layer on one or more material layers. The method also includes thermally curing the organic polymer layer. The method includes depositing a hard mask on the organic polymer layer and depositing a photoresist layer on the hard mask. The method also includes patterning the photoresist layer to expose at least a portion of the hard mask. The method includes etching the exposed portion of the hard mask to expose at least a portion of the organic polymer layer. The method also includes etching the exposed portion of the organic polymer layer to expose at least a portion of the one or more material layers.

The present disclosure relates to a piezoelectric single-crystal element, a MEMS device using same, and a method for manufacturing same, wherein the piezoelectric single-crystal element includes a wafer, a lower electrode stacked on the wafer, a piezoelectric single-crystal thin film stacked on the lower electrode, and an upper electrode stacked on the piezoelectric single-crystal thin film, wherein the piezoelectric single-crystal thin film is composed of PMN-PT, PIN-PMN-PT or Mn:PIN-PMN-PT, and the piezoelectric single-crystal thin film has a polarization direction set to a <001> axis, a <011> axis or a <111> axis, and a MEMS device using same.

The invention relates to a method of fabricating a micro machined channel, comprising the steps of providing a substrate of a first material and having a buried layer of a different material therein, and forming at least two trenches in said substrate by removing at least part of said substrate. Said trenches are provided at a distance from each other and at least partly extend substantially parallel to each other, as well as towards said buried layer. The method comprises the step of forming at least two filled trenches by providing a second material different from said first material and filling said at least two trenches with at least said second material; forming an elongated cavity in between said filled trenches by removing at least part of said substrate extending between said filled trenches; and forming an enclosed channel by providing a layer of material in said cavity and enclosing said cavity.

A micro-electromechanical system (MEMS) device includes a movable comb structure located in a cavity within an enclosure, and a stationary structure affixed to the enclosure. The movable comb structure includes a comb shaft portion and movable comb fingers laterally protruding from the comb shaft portion. The movable comb structure includes a metallic material portion. The movable structure and the stationary structure are configured to generate an electrical output signal based on lateral movement of the movable structure relative to the stationary structure.