A method for manufacturing a component and a component are provided for sensing a molecule. The method includes controlling a temperature during a reaction of two gases that react to produce a crystalline film spanning at least a cross-sectional area of a nanoaperture defined by a substrate among an array of nanoapertures aligned with crater structures defined by the substrate. A unique chemical vapor deposition (CVD) method that introduces a first gas and a second gas allows for formation of the crystalline film. When used in a molecule sensor, the component enables a user to record double-stranded DNA (dsDNA) translocations at unprecedented high (e.g., 1 MHz) bandwidths. The method for manufacturing the component enables development of applications requiring single-layer membranes built at- scale and enables high throughput 2-dimensional (2D) nanofluidics and nanopore studies.

A MEMS temperature sensor including a clamped-clamped microbeam having a drive electrode on one side configured for applying an AC current, and a sense electrode diagonally situated on the other side, a first anchor at one end and a second anchor at the other end of the microbeam. The first anchor receive a DC bias currents, which heats the microbeam to an operating temperature. The sense electrode is configured to capacitively sense oscillations in the microbeam due to an applied AC current. The MEMS temperature sensor has a three wafer construction in which the components are formed. The device is encapsulated by aluminum, and metal wires connect the first and second anchor, the drive electrode and the sense electrode to side electrode pads outside of the encapsulation. The MEMS temperature sensor has a linear operating region of 30-60 degrees Celsius.

This disclosure relates to the process of etching and treatment of side walls while processing microdevices. One aspect is to fill the device wall indentation with a polymer. The disclosure relates to a method and device with its structure to the process of etching and treatment of sidewalls. The methods of etching, coating, and curing are used.

A MEMS device is obtained by forming a temporary biasing structure on a semiconductor body, and forming an actuation coil on the semiconductor body, the actuation coil having at least one first end turn, one second end turn and an intermediate turn arranged between the first and the second end turns and electrically coupled to the first end turn through the temporary biasing structure. In this way, the intermediate turn is biased at approximately the same potential as the first end turn during galvanic growth, and, at the end of growth, the actuation coil has an approximately uniform thickness. At the end of galvanic growth, portions of the temporary biasing structure are selectively removed to electrically separate the first end turn from the intermediate turn and from a dummy biasing region adjacent to the first end turn.

A method for manufacturing a device having a three-dimensional magnetic structure includes applying or introducing magnetic particles onto or into a carrier element. A plurality of at least partly interconnected cavities are formed between the magnetic particles, which contact one another at points of contact, by coating the arrangement of magnetic particles and the carrier. The cavities are penetrated at least partly by the layer generated when coating, resulting in the three-dimensional magnetic structure. A conductor loop arrangement is provided on the carrier or a further carrier. When a current flows through the conductor loop, an inductance of the conductor loop is changed by the three-dimensional magnetic structure, or a force acts on the three-dimensional magnetic structure or the conductor loop by a magnetic field caused by the current flow, or when the position of the three-dimensional magnetic structure is changed, a current flow is induced through the conductor loop.

The invention relates to a silicon-based component with at least one reduced contact surface which, formed from a method combining at least one oblique side wall etching step with a “Bosch” etch of vertical side walls, improves, in particular, the tribology of components formed by micromachining a silicon-based wafer.

A method for producing a micro-pattern on surface of a wire is disclosed. The method includes a step of applying a nanoparticle solution to the wire to form a nanoparticle solution layer on the surface of the wire; and a step of irradiating the nanoparticle solution layer with a Bessel beam laser to induce sintering of nanoparticles, thereby forming a micro-pattern on the surface of the wire. It is possible to form a microelectrode pattern on a level of several to tens of micrometers on the surface of a micro-wire having a diameter on a scale of several tens to several hundreds of micrometers. Since a laser optical system with a long depth of focus is used, a micro-pattern with a uniform thickness can be formed on surface of a wire having a curvature in a simple.

A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

A method for directly bonding a metal to a transparent substrate includes providing a substrate; placing a metal foil directly on a face of the substrate; irradiating a portion of the metal foil with a laser beam so that metal corresponding to the portion melts and bonds directly to the substrate and forms a metal pad; and pumping a gas above the portion to prevent oxidation of the melted metal.

The present invention relates to a method and device capable to form a nanomaterial structure (13) on a receiver (14) by transfer of nanomaterial from a donor film. In some embodiment, the transfer can be provided by laser induced forward transfer, more preferably by blister based laser induced forward transfer. The method further comprises a simultaneous scanning of the donor film (12) or the receiver (14) so that, a computer driven means for moving the receiver (14) and the donor film (12) can form high precision nanomaterial structure (13). In a preferred embodiment, the simultaneous scanning can be provided by an imaging laser generating high harmonic waves which are detected by a detector. In yet another embodiment, the receiver (14) and/or donor film (12) can be further scanned by a broadband light source(s). In a preferred embodiment, imaging laser and/or light source(s) are emitting polarized light to determine orientation of the nanoparticle deposited on the receiver (14) and forming the nanomaterial structure (13).