A method includes mounting a window substrate to a carrier tape. The window substrate has a window extending between an upper surface of the window substrate and a lower surface of the window substrate, the carrier tape sealing the window at the lower surface. Bond pads on an active surface of a MEMS die are flip chip mounted to terminals on the upper surface of the window substrate, a MEMS active area of the MEMS die being aligned with the window of the window substrate. A magnet is mounted to an inactive surface of the MEMS die.

A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.

A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.

A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.

A method for fabricating a semiconductor structure includes providing a substrate with a first surface and a second surface, wherein at least one soldering pad is formed on the first surface of the substrate. The method also includes forming at least one via to expose each soldering pad by etching the substrate from the second surface, forming a seed layer to cover the second surface of the substrate and the sidewall and the bottom surfaces of each via, and then forming a redistribution metal layer over a portion of the seed layer formed on the sidewall and the bottom surfaces of each via and the second surface of the substrate surrounding each via. The method further includes alternately performing a pre-wetting process and a chemical etching process to completely remove the portion of the seed layer not covered by the redistribution metal layer.

A method for fabricating a semiconductor structure includes providing a substrate with a first surface and a second surface, wherein at least one soldering pad is formed on the first surface of the substrate. The method also includes forming at least one via to expose each soldering pad by etching the substrate from the second surface, forming a seed layer to cover the second surface of the substrate and the sidewall and the bottom surfaces of each via, and then forming a redistribution metal layer over a portion of the seed layer formed on the sidewall and the bottom surfaces of each via and the second surface of the substrate surrounding each via. The method further includes alternately performing a pre-wetting process and a chemical etching process to completely remove the portion of the seed layer not covered by the redistribution metal layer.

A drop test device for a micromechanical component. The drop test device includes a drop body having a shell and having an interior space for receiving at least one micromechanical component.