Patent classifications
B81C2203/0109
MEMS pressure sensor
The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps to form a differential pressure sensor.
METHOD AND SYSTEM FOR FABRICATING A MEMS DEVICE CAP
A device includes a substrate comprising a first standoff, a second standoff, a third standoff, a first cavity, a second cavity, and a bonding material covering a portion of the first, the second, and the third standoff. The first cavity is positioned between the first and the second standoffs, and the second cavity is positioned between the second and the third standoffs. The first cavity comprises a first cavity region and a second cavity region separated by a portion of the substrate extruding thereto, and wherein a depth associated with the first cavity region is greater than a depth associated with the second cavity. A surface of the first cavity is covered with a getter material.
TRANSDUCER PACKAGE WITH THROUGH-VIAS
A microphone includes a microelectromechanical system (MEMS) die configured to sense an acoustic signal, a base, and a lid. The base has a top surface and a bottom surface. The bottom surface includes a first electrical pad and a second electrical pad. The first electrical pad and the second electrical pad are configured to transmit an electrical signal indicative of the acoustic signal. The lid has a top surface and a bottom surface. The lid includes a cavity that surrounds the MEMS die. The top surface of the lid includes a third electrical pad and a fourth electrical pad. The first electrical pad and the third electrical pad are electrically connected, and the second electrical pad and the fourth electrical pad are electrically connected.
Pressure sensing implant
A wireless circuit includes a housing having at least one opening, and sensor connected to the housing at the opening. The sensor includes a first layer having a first dimension and a second layer having a second dimension shorter than the first dimension. The second layer may be positioned entirely within the housing and a surface of said first layer may be exposed to an exterior of the housing.
SEMICONDUCTOR DEVICES AND RELATED METHODS
In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.
TOP NOTCH SLIT PROFILE FOR MEMS DEVICE
Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) device in which a slit at a movable mass of the MEMS device has a top notch slit profile. The MEMS device may, for example, be a speaker, an actuator, or the like. The slit extends through the movable mass, from top to bottom, and has a width that is uniform, or substantially uniform, from the bottom of the movable mass to proximate the top of movable mass. Further, in accordance with the top notch slit profile, top corner portions of the MEMS substrate in the slit are notched, such that a width of the slit bulges at the top of the movable mass. The top notch slit profile may, for example, increase the process window for removing an adhesive from the slit while forming the MEMS device.
MEMS MODULE AND METHOD OF MANUFACTURING MEMS MODULE
A MEMS module includes: a first MEMS element and a second MEMS element each including a movable portion which is a portion of a substrate including a hollow portion formed therein, the movable portion configured to warp in shape according to an air pressure difference between an internal air pressure inside the hollow portion and an external air pressure outside the hollow portion; and an electronic component configured to calculate a change in external air pressure outside the substrate by using an amount of warpage of the movable portion of at least one of the first MEMS element and the second MEMS element, wherein the amount of warpage of the movable portion according to the external air pressure differs between the first MEMS element and the second MEMS element.
METHOD FOR PRODUCING A BONDING PAD FOR A MICROMECHANICAL SENSOR ELEMENT
A method for producing a bonding pad for a micromechanical sensor element. The method includes: depositing a first metal layer onto a top face of the functional layer, and depositing a second metal layer onto the first metal layer, wherein only the first layer or only the second layer is formed in a border region extending around a bonding pad region; covering a protective layer over a top face of the second metal layer in the bonding pad region and over the first or second metal layer in an inner peripheral portion of the border region, which inner peripheral portion adjoins the bonding pad region; etching the first or second layer at least in an outer peripheral portion of the border region down to the top face of the functional layer; removing the protective layer; carrying out an etching process starting from the top face of the layered structure.
Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature
Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.
MEMS mirror arrangement for detecting a large angular range
The invention relates to a MEMS mirror assembly for detecting a large angular range up to 180°, preferably up to 160°, and to a method for producing a MEMS mirror assembly. The mirror assembly comprises a carrier substrate (1), on which a mirror (2) vibrating about at least one axis is mounted, a transparent cover (4), which is connected in a hermetically sealed manner to the carrier substrate (1) and which comprises an ellipsoidal dome (6) having a substantially round base area, and a compensation optical system (8), which is arranged in a predefined beam path for an incident beam outside the dome (6). The middle of the mirror (2) lies in the centre point of the dome, and the compensation optical system (8) collimates the incident beam in such a way that a divergence or convergence of the beam caused by the boundary surfaces of the dome once said beam has exited from the dome (6) is substantially compensated. The MEMS mirror assemblies are produced by joining a cover wafer and a mirror wafer, which each comprise a plurality of hemispherical domes and mirrors mounted on the carrier substrate. The mirror assemblies are then separated from the joined wafers. The domes of the cover wafer are produced by a glass flow process.