Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a semiconductor substrate including a cavity and a movable feature in the cavity. The semiconductor device structure also includes a cap substrate bonded to the semiconductor substrate to seal the cavity. There is an interface between the cap substrate and the semiconductor substrate. The semiconductor device structure further includes a sealing feature embedded in the semiconductor substrate and surrounding the cavity. The sealing feature extends across the interface and penetrates through the cap substrate.

A MEMS device package assembly for encapsulating one or more internal components includes a first MEMS device package. The first package includes a cover and a substrate attached to the cover by any suitable methods of attachment. A corrugated structure is formed on at least one of an inner or outer wall of the cover. The assembly further includes a second MEMS device package having a cover, a substrate, and a corrugated structured formed on at least one of an inner or outer wall of the cover. The first and second MEMS device packages may be coupled to the same substrate or different substrate. In another embodiment, the first MEMS device package may be mounted on the second MEMS device package. In yet another embodiment, the first MEMS device package may be contained in the second MEMS device package.

The invention relates to a covering (1) for an electronic component (e.g. of the MEMS, BAW, or SAW type). The covering comprises at least one layer (5, 6, 7) having a structure (19, 20, 21) with a number of prominences (8, 9, 15) and/or depressions (10, 11, 16). The invention furthermore relates to a method for producing a covering (1) of this type.

A method for producing a plurality of sensor devices. The method includes: furnishing a substrate having contact points in a plurality of predetermined regions for sensor chips; disposing the sensor chips in the predetermined regions on the substrate, and electrically contacting the sensor chips to the contact points; attaching a frame structure with an adhesive material on the substrate and between the sensor chips, the frame structure proceeding laterally around the sensor chips, the frame structure extending, after attachment, vertically beyond the sensor chips and forming a respective cavity for at least one of the sensor chips, and a membrane spanning at least one of the cavities for the sensor chips so as to cover it; and singulating the substrate, or the frame structure and the substrate, around the respective cavities into several sensor devices.

A hermetically sealed package includes: a base substrate and a cover substrate which define at least part of the package, the base substrate and the cover substrate being hermetically sealed to one another by at least one laser bonding line, the at least one laser bonding line having a height perpendicular to its bonding plane, at least the cover substrate including a toughened layer at its surface, at least on a side opposite the at least one laser bonding line; and at least one functional area enclosed in the package.

The invention relates to a covering (1) for an electronic component (e.g. of the MEMS, BAW, or SAW type). The covering comprises at least one layer (5, 6, 7) having a structure (19, 20, 21) with a number of prominences (8, 9, 15) and/or depressions (10, 11, 16). The invention furthermore relates to a method for producing a covering (1) of this type.

A hollow package (103) includes a substrate (109), an element (111), a partition wall (113), and a top plate (115) and has one or more closed hollow parts (117) that are covered by the substrate (109), the partition wall (113), and the top plate (115), and the substrate (109), the partition wall (113), and the top plate (115) are sealed with a cured product of a sealing resin composition. The top plate (115) and the partition wall (113) are composed of an organic material, and the thickness of the top plate (115), the thickness of the partition wall (113), the width of the partition wall, and the maximum width of the hollow part (117) are each within respective predetermined ranges. The sealing resin composition comprises (A) an epoxy resin that includes one or more selected from the group consisting of an epoxy resin containing two epoxy groups in the molecule and an epoxy resin containing three or more epoxy resins in the molecule and (B) an inorganic filler.

An electronic component includes a piezoelectric substrate, a first functional element, a first wiring, insulating films, a first conductive film, and a first external connection terminal. The first functional element is disposed on the piezoelectric substrate. The first wiring is disposed on the piezoelectric substrate, and is electrically connected to the first functional element. The insulating films are disposed on the piezoelectric substrate, and define a first hollow portion in which the first functional element is included. The first conductive film is disposed on the insulating films, and has a portion that passes through the insulating films and is electrically connected to the first wiring. The first external connection terminal is provided on the first conductive film, and is disposed at a position overlapping at least a portion of the first functional element in a plan view as viewed in the thickness direction of the piezoelectric substrate.

A semiconductor device package includes a carrier, a wall disposed on a top surface of the carrier, a cover, and a sensor element. The cover includes a portion protruding from a bottom surface of the cover, where the protruding portion of the cover contacts a top surface of the wall to define a space. The sensor element is positioned in the space.

A semiconductor device having a lid, and method of making a semiconductor device having a lid is disclosed. The semiconductor device includes a substrate. A device is positioned at the substrate. A lid made of a semiconductor material is positioned over the device to form a protective cavity about the device. The lid is formed using a semiconductor process. In other examples, the lid may be made of a nonconductive material, such as a polymer material. The lids may be formed as part of a batch process.