In described examples, a bondline structure is arranged along a periphery of a cavity. The bondline structure extends from a first substrate and is configured to bond with an interposer arranged on a second substrate. A diffusion barrier is arranged on the first substrate for contacting the interposer. The diffusion barrier is arranged to impede a contaminant against migrating from the bondline structure and entering the cavity.

In described examples, apparatus includes a first substrate that delimits a surface of a cavity and a bondline structure arranged along a periphery of the cavity, where the bondline structure extends from the first substrate, and the bondline structure configured to bond with an interposer arranged on a second substrate. The apparatus also includes a diffusion barrier on the first substrate, the diffusion barrier configured to contact the interposer and impede a contaminant against migrating from the bondline structure and entering the cavity.

First reinforcement stripes are formed on a process surface of a base substrate. A first epitaxial layer covering the first reinforcement stripes is formed on the first process surface. Second reinforcement stripes are formed on the first epitaxial layer. A second epitaxial layer covering the second reinforcement stripes is formed on exposed portions of the first epitaxial layer. Semiconducting portions of transistor cells are formed in or portions of micro electromechanical structures are formed from the second epitaxial layer.

Preferably, the invention relates to a MEMS package having at least one layer for protecting a MEMS element, wherein the MEMS element has at least one MEMS interaction region on a substrate and a surface conformal coating of the MEMS element is applied with a dielectric layer. Particularly preferably, the invention relates to a MEMS transducer package in which a MEMS element, for example with a MEMS membrane and processor, preferably an integrated circuit, are present on a substrate. For protection, a surface conformal coating of a dielectric is preferably first applied to the MEMS element, for example by spray coating, mist coating, and/or vapor coating. Then, preferably, an electrically conductive layer is applied. Depending on the configuration, the layers may be removed in some regions above a MEMS interaction region of the MEMS element, for example for a sound port of a MEMS membrane.

A process for fabricating a device for detecting electromagnetic radiation includes the step of providing a detecting element suspended by a supporting pillar. The pillar has a lateral through-aperture formed via a local break in the continuity of a layer of interest, because of the presence of a jut in a vertical orifice.

The detection structure for a MEMS accelerometer is formed by a substrate; a first movable mass and a second movable mass which extend at a distance from each other, suspended on the substrate and which are configured to undergo a movement, with respect to the substrate, in response to an acceleration. The detection structure also has a first movable electrode integral with the first movable mass; a second movable electrode integral with the second movable mass; a first fixed electrode integral with the substrate and configured to form, with the first movable electrode, a first variable capacitor; and a second fixed electrode integral with the substrate and configured to form, with the second movable electrode, a second variable capacitor. The detection structure has an insulation region, of electrically insulating material, which is suspended on the substrate and extends between the first movable mass and the second movable mass.

In described examples, a bondline structure is arranged along a periphery of a cavity. The bondline structure extends from a first substrate and is configured to bond with an interposer arranged on a second substrate. A diffusion barrier is arranged on the first substrate for contacting the interposer. The diffusion barrier is arranged to impede a contaminant against migrating from the bondline structure and entering the cavity.

In described examples, a bondline structure is arranged along a periphery of a cavity. The bondline structure extends from a first substrate and is configured to bond with an interposer arranged on a second substrate. A diffusion barrier is arranged on the first substrate for contacting the interposer. The diffusion barrier is arranged to impede a contaminant against migrating from the bondline structure and entering the cavity.

First reinforcement stripes are formed on a process surface of a base substrate. A first epitaxial layer covering the first reinforcement stripes is formed on the first process surface. Second reinforcement stripes are formed on the first epitaxial layer. A second epitaxial layer covering the second reinforcement stripes is formed on exposed portions of the first epitaxial layer. Semiconducting portions of transistor cells are formed in or portions of micro electromechanical structures are formed from the second epitaxial layer.

Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.