A centrifuge screening system and method of testing MEMS devices using the system. The wafer level centrifuge screening system can include a base centrifuge system and a cassette mounting hub coupled to the base centrifuge system. The method can include applying a smooth and continuous acceleration profile to one or more MEMS components via the base centrifuge system. Each of the one or more MEMS components can have one or more MEMS devices formed thereon. The one or more MEMS components can be provided in one or more cassettes configured on the cassette mounting hub. The method can also include identifying one or more target MEMS components, which can include identifying stiction in one or more MEMS devices on the one or more MEMS components.

A sensor system includes first and second MEMS structures and a processing circuit. The first and second MEMS structures are configured to produce first and second output signals, respectively, in response to a physical stimulus. A method performed by the processing circuit entails receiving the first and second output signals and detecting a defective one of the first and second MEMS structures from the first and second output signals by determining that the first and second output signals are uncorrelated to one another. The method further entails utilizing only the first or the second output signal from a non-defective one of the MEMS structures to produce a processed output signal when one of the MEMS structures is determined to be defective and utilizing the first and second output signals from both of the MEMS structures to produce the processed output signal when neither of the MEMS structures is defective.

A microelectronic device includes a deep trench test structure in semiconductor material of a substrate. The deep trench test structure has pad trench segments with a liner of electrically non-conductive material and a trench fill material on the liner, extending to tops of the pad trench segments. The pad trench segments extend across a probe pad region; at least 20 microns in every lateral direction. The trench fill material at the top of the pad trench segments occupies at least 25 percent of the probe pad region. The liner may electrically isolate the trench fill material from the semiconductor material, or the deep trench test structure may include a contact trench segment wherein the trench fill material contacts the semiconductor material. The deep trench test structure may be probed on the pad trench segments to measure an impedance between the trench fill material and the semiconductor material.

A sensor system includes first and second MEMS structures and a processing circuit. The first and second MEMS structures are configured to produce first and second output signals, respectively, in response to a physical stimulus. A method performed by the processing circuit entails receiving the first and second output signals and detecting a defective one of the first and second MEMS structures from the first and second output signals by determining that the first and second output signals are uncorrelated to one another. The method further entails utilizing only the first or the second output signal from a non-defective one of the MEMS structures to produce a processed output signal when one of the MEMS structures is determined to be defective and utilizing the first and second output signals from both of the MEMS structures to produce the processed output signal when neither of the MEMS structures is defective.

A microelectromechanical system (MEMS) sensor testing device, system and method are provided. The testing device includes a socket having a plurality of pads configured to receive a respective plurality of pins of the MEMS sensor, a body having a plurality of operable positions associated with a respective plurality of orientations of the MEMS sensor and circuitry which performs a method for testing the MEMS sensor in the plurality of operable positions. The method includes, for each position of the plurality of operable positions, outputting an indication of the position to the plurality of operable positions, receiving one or more measurements made by the MEMS sensor at the respective position and determining whether the one or more measurements satisfy a reliability criterion. The method includes generating a report based on the plurality of measurements and indicating whether the plurality of measurements satisfy a plurality of reliability criteria, respectively.

A microelectronic device includes a deep trench test structure in semiconductor material of a substrate. The deep trench test structure has pad trench segments with a liner of electrically non-conductive material and a trench fill material on the liner, extending to tops of the pad trench segments. The pad trench segments extend across a probe pad region; at least 20 microns in every lateral direction. The trench fill material at the top of the pad trench segments occupies at least 25 percent of the probe pad region. The liner may electrically isolate the trench fill material from the semiconductor material, or the deep trench test structure may include a contact trench segment wherein the trench fill material contacts the semiconductor material. The deep trench test structure may be probed on the pad trench segments to measure an impedance between the trench fill material and the semiconductor material.

A microelectromechanical system (MEMS) sensor testing device, system and method are provided. The testing device includes a socket having a plurality of pads configured to receive a respective plurality of pins of the MEMS sensor, a body having a plurality of operable positions associated with a respective plurality of orientations of the MEMS sensor and circuitry which performs a method for testing the MEMS sensor in the plurality of operable positions. The method includes, for each position of the plurality of operable positions, outputting an indication of the position to the plurality of operable positions, receiving one or more measurements made by the MEMS sensor at the respective position and determining whether the one or more measurements satisfy a reliability criterion. The method includes generating a report based on the plurality of measurements and indicating whether the plurality of measurements satisfy a plurality of reliability criteria, respectively.

A method for producing a micromechanical component is provided, In a preparatory step, a substrate device of the micromechanical component and/or a cap device of the micromechanical component is patterned. In a first sub-step, a first pressure and/or a first chemical composition being adjusted, and the substrate device and the cap device being connected to each other so that a first cavern is formed, sealed from an environment of the micromechanical component, the first pressure prevailing in the first cavity and/or the first chemical composition being enclosed. In a second sub-step, a second pressure and/or a second chemical composition being adjusted, and the substrate device and the cap device being connected to each other so that a second cavity is formed, sealed from the environment of the micromechanical component and from the first cavity, the second pressure prevailing in the second cavity and/or the second chemical composition being enclosed.

A discrete-time high voltage generating circuitry is described, configured to provide a discrete-time high voltage at a high voltage output only during defined high voltage periods. The discrete-time high voltage generating circuitry includes a current mirror circuitry configured to receive a supply current from a high voltage source and to provide a slew current. The discrete-time high voltage generating circuitry is configured to generate the discrete-time high voltage using the slew current. Further, a method to operate a discrete-time high voltage generating circuitry is described. The circuitry and method may be used to provide a discrete-time self-test bias voltage to at least one capacitive load such as a capacitive MEMS element.

A method for producing a micromechanical component is provided, In a preparatory step, a substrate device of the micromechanical component and/or a cap device of the micromechanical component is patterned. In a first sub-step, a first pressure and/or a first chemical composition being adjusted, and the substrate device and the cap device being connected to each other so that a first cavern is formed, sealed from an environment of the micromechanical component, the first pressure prevailing in the first cavity and/or the first chemical composition being enclosed. In a second sub-step, a second pressure and/or a second chemical composition being adjusted, and the substrate device and the cap device being connected to each other so that a second cavity is formed, sealed from the environment of the micromechanical component and from the first cavity, the second pressure prevailing in the second cavity and/or the second chemical composition being enclosed.