A system and method (referred to as the system) fabricates controllable atomic assemblies in two and three dimensions. The systems identify by a non-invasive imager, a local atomic structure, distribution of vacancies, and dopant atoms and modify, by a microscopic modifier, the local atomic structure, via electron beam irradiation. The systems store, by a knowledge base, cause-and-effect relationships based on a non-invasive imaging and electron scans. The systems detect, by detectors, changes in the local atomic structure induced by the electron irradiation; and fabricate, a modified atomic structure by a beam control software and feedback.

Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The V.sub.RF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the V.sub.RF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

A system and method (referred to as the system) fabricates controllable atomic assemblies in two and three dimensions. The systems identify by a non-invasive imager, a local atomic structure, distribution of vacancies, and dopant atoms and modify, by a microscopic modifier, the local atomic structure, via electron beam irradiation. The systems store, by a knowledge base, cause-and-effect relationships based on a non-invasive imaging and electron scans. The systems detect, by detectors, changes in the local atomic structure induced by the electron irradiation; and fabricate, a modified atomic structure by a beam control software and feedback.

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

In a calculator in a MEMS manufacturing system, a stage control unit inclines a stage based on a stage angle 1 setting a stage inclination angle and a stage angle 2 of the inclination angle different from the stage angle 1. A stage-angle calculation unit calculates the stage inclination angles from first and second images acquired by a SEM apparatus when the stage control unit sets the stage at the stage angles 1 and 2. A 3D-data creation unit creates three-dimensional device data from a third image that is a device image acquired when the stage is set at the stage angle 1 and a fourth image that is a device image acquired when the stage is set at the stage angle 2. When the three-dimensional device data is created, a correction value calculated from the stage angles 1 and 2 and the first and second images is used.

In a calculator in a MEMS manufacturing system, a stage control unit inclines a stage based on a stage angle 1 setting a stage inclination angle and a stage angle 2 of the inclination angle different from the stage angle 1. A stage-angle calculation unit calculates the stage inclination angles from first and second images acquired by a SEM apparatus when the stage control unit sets the stage at the stage angles 1 and 2. A 3D-data creation unit creates three-dimensional device data from a third image that is a device image acquired when the stage is set at the stage angle 1 and a fourth image that is a device image acquired when the stage is set at the stage angle 2. When the three-dimensional device data is created, a correction value calculated from the stage angles 1 and 2 and the first and second images is used.

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.

The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The V.sub.RF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the V.sub.RF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.