A solid-state ion conductor includes a compound of Formula 1:
Li.sub.(6-a)x+2y-b*z-6A.sub.1−xM.sup.a.sub.xO.sub.yX.sup.b.sub.z  Formula 1
wherein, in Formula 1, A is an element having an oxidation state of +6, M is an element having an oxidation state of a, wherein a is +2, +3, +4, +5, or a combination thereof, X is an element having an oxidation state of b, wherein b is −1, −3, or a combination thereof, and 2<[(6−a)x+2y−b*z−6]≤6.5, 0≤x≤1, y>0, and z≥0.

A solid-state ion conductor includes a compound of Formula 1:

Li.sub.(6−a)x+2y−b*z−6A.sub.1−xM.sup.a.sub.xO.sub.yX.sup.b.sub.z   Formula 1

wherein, in Formula 1, A is an element having an oxidation state of +6, M is an element having an oxidation state of a, wherein a is +2, +3, +4, +5, or a combination thereof, X is an element having an oxidation state of b, wherein b is −1, −3, or a combination thereof, and 2<[(6−a)x+2y−b*z−6]≤6.5,0 ≤x≤1, y>0, and z≥0.

The present invention relates to a method for removing radioactive element thorium in a rare earth mineral, comprising: mixing the rare earth mineral with selenium dioxide in water, reacting radioactive element thorium with selenium dioxide by hydrothermal method, cooling to form a crystal, and separating the crystal to remove the radioactive element thorium. In the invention, tetravalent element thorium is selectively bound to inorganic ligand selenium dioxide in a hydrothermal environment to form a crystal, thereby achieving removal of radioactive element thorium. The method has high crystallization rate and high decontamination efficiency, and removes thorium from trivalent lanthanide element by crystallization solidification under a uniform reaction condition. Compared to a conventional industrial method for thorium separation, the method has low energy consumption and high separation ratio, enables one-step solidification separation, and effectively avoids the disadvantages of redundant separation operations and a large amount of organic and radioactive liquid wastes.

A method of producing mineral-rich algae by growing algae with an algae biofilm growing apparatus, wherein the algae is fed a mineral-rich feed stock. Furthermore, the mineral-rich algae is harvested and used as a foodstuff for human and animal consumption.

The present disclosure relates generally to the production of tellurium and selenium nanostructures in bacteria. The nanostructures are unique in size, shape, length and stability.

The present invention relates to a method for removing radioactive element thorium in a rare earth mineral, comprising: mixing the rare earth mineral with selenium dioxide in water, reacting radioactive element thorium with selenium dioxide by hydrothermal method, cooling to form a crystal, and separating the crystal to remove the radioactive element thorium. In the invention, tetravalent element thorium is selectively bound to inorganic ligand selenium dioxide in a hydrothermal environment to form a crystal, thereby achieving removal of radioactive element thorium. The method has high crystallization rate and high decontamination efficiency, and removes thorium from trivalent lanthanide element by crystallization solidification under a uniform reaction condition. Compared to a conventional industrial method for thorium separation, the method has low energy consumption and high separation ratio, enables one-step solidification separation, and effectively avoids the disadvantages of redundant separation operations and a large amount of organic and radioactive liquid wastes.

A process of growth in the thickness of at least one facet of a colloidal inorganic sheet, by sheet is meant a structure having at least one dimension, the thickness, of nanometric size and lateral dimensions great compared to the thickness, typically more than 5 times the thickness. The process allows the deposition of at least one monolayer of atoms on at least one inorganic colloidal sheet, this monolayer being constituted of atoms of the type of those contained or not in the sheet. Homostructured and heterostructured materials resulting from such process as well as the applications of the materials are also described. By homostructured is meant a material of homogeneous composition in the thickness and by heterostructured is meant a material of heterogeneous composition in the thickness.

Systems and methods for detecting and/or removing selenate from an aqueous selenate-containing solution are described. The method includes adding sufficient acid to the aqueous selenate-containing solution to acidify the aqueous selenate-containing solution; contacting the acidic aqueous selenate-containing solution with an underpotantial deposited copper-coated electrode; and removing selenate from the aqueous selenate-containing solution by forming copper-selenide on the underpotential copper-coated electrode.

Systems and methods for detecting and/or removing selenate from an aqueous selenate-containing solution are described. The method includes adding sufficient acid to the aqueous selenate-containing solution to acidify the aqueous selenate-containing solution; contacting the acidic aqueous selenate-containing solution with an underpotantial deposited copper-coated electrode; and removing selenate from the aqueous selenate-containing solution by forming copper-selenide on the underpotential copper-coated electrode.

This application relates to the field of data storage technologies, and specifically, to a phase-change memory material, a preparation method thereof, a phase-change memory chip, and a device. The phase-change memory material includes a material shown by Ti.sub.aSb.sub.bTe.sub.cD.sub.d, where a represents an atom percent of Ti, b represents an atom percent of Sb, c represents an atom percent of Te, d represents an atom percent of an element D, and a+b+c+d=1; 3%a45%, and 0.5(b:c)3; and D is a doping element, and 0d15%. The phase-change memory material has low operation power consumption and a low operation delay.