A method for preparation of mesoporous nitrogen-doped carbon includes forming a composition by solubilizing a nitrogen-containing polymer in an aqueous solution of ZnCl.sub.2 and drying the aqueous solution, the method further includes heating the composition after drying to a temperature sufficiently high to carbonize the nitrogen-containing polymer to form the mesoporous nitrogen-doped carbon.

A composite with high energy storage capacity for use in energy storage devices includes graphene and mesoporous graphitic carbon nitride (mc@g-C.sub.3N.sub.4). The graphitic carbon nitride is coated on mesoporous carbon (mc@g-C3N4) at a concentration ranging from 3% to 33%. The graphitic carbon nitride is obtained from condensation of mesoporous carbon and urea or a precursor thereof. Electrodes may be prepared from the composite. High energy high power storage devices such as the Electric Double Layer Capacitor (EDLC) may be fabricated with these electrodes.

Disclosed are an anode for a lithium secondary battery, a lithium secondary battery including the anode, and a manufacturing method thereof. In particular, the anode includes a lithium metal layer and an interfacial layer made of phosphorous-doped graphitic carbon nitride and a single ion conducting polymer.

A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca.sub.1-a-b-c-d-eZn.sub.dMg.sub.eSr.sub.cBa.sub.bX.sub.a).sub.2Si.sub.5N.sub.8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0≦b≦1 and 0≦c≦ and 0≦d≦1 and 0≦e≦1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.

Graphitic carbon nitride has been prepared and its structure confirmed by extensive characterization. This material has useful electronic, in particular semiconducting, properties. Crystalline thin films have been prepared. Synthesis may be carried out by condensation of unsaturated carbon- and nitrogen-containing compound(s) in inert solvent such as a salt melt, forming graphitic carbon nitride at a gas-liquid or solid-liquid interface.

A method of forming a semiconductor film at pressure between 10.sup.−5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.

Methods for fabricating triazene-based graphitic carbon nitride films are provided. A substrate can be coated with silk fibroin, submerged in the central zone of plasma, and provided with microwave power. The substrate can then be dried to give a triazene-based graphitic carbon nitride film. Methods of the subject invention can be easily scaled up to industrial levels and produce triazene-based graphitic carbon nitride films that show excellent electrical properties as anodes in lithium-ion batteries.

The present disclosure relates to an ultraviolet absorber, a preparation method therefor, and an ultraviolet screening product containing same and, more specifically, to: an ultraviolet absorber, which comprises polymeric carbon nitrides having a heterocyclic structure comprising C and N; a preparation method therefor; and an ultraviolet screening product containing same.

Disclosed are a honeycomb-like homo-type heterojunction carbon nitride composite material and a preparation method thereof, and an application of the honeycomb-like homo-type heterojunction carbon nitride composite material in catalytic treatment of waste gas. The preparation method includes the following steps: with two different carbon nitride precursors namely urea and thiourea as raw materials, weighing certain amounts of the urea and the thiourea, adding the urea and the thiourea into a crucible, adding a certain amount of ultrapure water, placing the crucible in a muffle furnace, and carrying out calcination molding. The honeycomb-like homo-type heterojunction carbon nitride prepared by the one-step method has good photocatalytic effect to catalytic degradation of NO; meanwhile, the honeycomb-like homo-type heterojunction carbon nitride composite material has the advantages of rich and easily-available production raw materials, good stability, reusability, etc., and has application prospects in the field of treatment of NO in the air.

A composition comprising a graphitic carbon nitride material and a conductive carbon material coating may be used in electrodes or in batteries such as sodium ion batteries. The composition may be prepared using a method comprising the steps of providing a nitrogenous compound; adding a carbonaceous material to the nitrogenous compound to form a slurry; drying the slurry to form a coated mixture; and carbonizing the coated mixture.