A main object of the present disclosure is to provide an active material of which capacity properties are excellent. The present disclosure achieves the object by providing an active material to be used for a fluoride ion battery, the active material comprising: a composition represented by M.sup.1N.sub.x in which M.sup.1 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, and x satisfies 0.05≤x≤3; or a composition represented by M.sup.2Ln.sub.yN.sub.z in which M.sup.2 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, Ln is at least one kind of Sc, Y, and lanthanoid, y satisfies 0.1≤y≤3, and z satisfies 0.15≤z≤6.

Catalysts, particularly nanocatalysts, useful for converting carbon dioxide into desired conversion products, such as sustainable chemicals and fuels. The nanocatalysts may comprise at least one nanoparticle having a main component and a secondary component, wherein at least one of the main component and the secondary component facilitates the conversion of carbon dioxide. The present disclosure also relates to methods for preparing the nanocatalysts described herein and methods of using the same.

A main object of the present disclosure is to provide an active material of which capacity properties are excellent. The present disclosure achieves the object by providing an active material to be used for a fluoride ion battery, the active material comprising: a composition represented by M.sup.1N.sub.x in which M.sup.1 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, and x satisfies 0.05x3; or a composition represented by M.sup.2Ln.sub.yN.sub.z in which M.sup.2 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, Ln is at least one kind of Sc, Y, and lanthanoid, y satisfies 0.1y3, and z satisfies 0.15z6.

A main object of the present disclosure is to provide an active material of which capacity properties are excellent. The present disclosure achieves the object by providing an active material to be used for a fluoride ion battery, the active material comprising: a composition represented by M.sup.1N.sub.X in which M.sup.1 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, and x satisfies 0.05x3; or a composition represented by M.sup.2Ln.sub.yN.sub.z in which M.sup.2 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, Ln is at least one kind of Sc, Y, and lanthanoid, y satisfies 0.1y3, and z satisfies 0.15z6.

Catalysts, particularly nanocatalysts, useful for converting carbon dioxide into desired conversion products, such as sustainable chemicals and fuels. The nanocatalysts may comprise at least one nanoparticle having a main component and a secondary component, wherein at least one of the main component and the secondary component facilitates the conversion of carbon dioxide. The present disclosure also relates to methods for preparing the nanocatalysts described herein and methods of using the same.

A main object of the present disclosure is to provide an active material of which capacity properties are excellent. The present disclosure achieves the object by providing an active material to be used for a fluoride ion battery, the active material comprising: a composition represented by M.sup.1N.sub.x in which M.sup.1 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, and x satisfies 0.05?x?3; or a composition represented by M.sup.2Ln.sub.yN.sub.z in which M.sup.2 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, Ln is at least one kind of Sc, Y, and lanthanoid, y satisfies 0.1?y?3, and z satisfies 0.15?z?6.

The method for manufacturing a photosemiconductor according to the present disclosure includes treating a metal base material containing at least one kind of transition metal with a plasma under a pressure lower than atmospheric pressure and at a temperature lower than a volatilization temperature of the transition metal under an atmosphere at the pressure to provide the photosemiconductor containing the transition metal and a nitrogen element from at least a part of the metal base material. Here, the plasma is generated by applying a high-frequency voltage at a frequency in a range of not less than 30 MHz and not more than 300 MHz to a gas between a first electrode and a second electrode, and the gas is any one of: (i) a nitrogen gas; (ii) a gaseous mixture consisting of a nitrogen gas and an oxygen gas; (iii) a gaseous mixture consisting of a nitrogen gas and a rare gas; and (iv) a gaseous mixture consisting of a nitrogen gas, an oxygen gas, and a rare gas.

Disclosed is a ferroelectric tunnel junction device and memory cell, and relates to the technical field of ferroelectric tunnel junction devices, comprising a ferroelectric tunnel barrier layer; a first electrode layer on one side of the ferroelectric tunnel barrier layer; a second electrode layer on the other side of the ferroelectric tunnel barrier layer; and a first interfacial layer at the interface between the first electrode layer and the ferroelectric tunnel barrier layer. The first electrode layer comprises a first antiperovskite material and the first interfacial layer comprises a second antiperovskite material that differs from the first antiperovskite material in composition, and preferably in at least the occupancy of corner sites or the centre sites. Also disclosed is a memory cell comprising the ferroelectric tunnel junction device, wherein the data is recordable as a direction of electric polarisation of the ferroelectric tunnel barrier layer.