Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).

Electrode for an energy storage device which comprises a powder of particles (26) comprising amorphous, micro- or nano-crystalline coated or uncoated silicon oxynitride having a chemical formula SiN.sub.xO.sub.y, where 0.03≤x+y<1.3, whereby nitrogen makes up 10-99% of said x+y value with the balance being oxygen.

The present invention discloses a nitrogen-containing luminescent particle, characterized in that a structure of the nitrogen-containing luminescent particle is divided into an oxygen poor zone, a transition zone, and an oxygen rich zone from a core to an outer surface of the particle depending on an increasing oxygen content, the oxygen poor zone being predominantly a nitride luminescent crystal or oxygen-containing solid solution thereof, the transition zone being predominantly a nitroxide material, the oxygen rich zone being predominantly an oxide material or oxynitride material; the nitride luminescent crystal or oxygen-containing solid solution thereof has a chemical formula of M.sub.m-m1A.sub.a1B.sub.b1O.sub.o1N.sub.n1:R.sub.m1, the nitroxide material has a chemical formula of M.sub.m-m2A.sub.a2B.sub.b2O.sub.o2N.sub.n2:R.sub.m2, the oxide material or oxynitride material has a chemical formula of M.sub.m-m3A.sub.a3B.sub.b3O.sub.o3N.sub.n3:R.sub.m3. The nitrogen-containing luminescent particle and the nitrogen-containing illuminant of the present invention have good chemical stability, good aging and light decay resistance, and high luminescent efficiency, and are useful for various luminescent devices. The manufacturing method of the present invention is easy and reliable, and useful for industrial mass production.

The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.

Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH.sub.3).sub.x(SiH.sub.2—).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).

Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5×10.sup.−3 g/m.sup.2.Math.day as measured under conditions of a temperature of 38° C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.

A phosphor having the general formula EA.sub.7A.sub.2T1.sub.t1T2.sub.t2 T3.sub.t3N.sub.nO.sub.o:RE. EA is selected from the group of divalent elements. A is selected from the group of monovalent elements. T1 is selected from the group of trivalent elements. T2 is selected from the group of tetravalent elements. T3 is selected from the group of pentavalent elements. RE is an activator element. 16+3 t1+4 t2+5 t3−3n−2 o=0. t1+t2+t3=5; n+o=16; 0≤t1≤4; 0≤t2≤5; 0≤t3≤5; 0≤n≤9; 7≤o≤16.

Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

A window module includes: a window; a first anti-reflection layer disposed on the window; and a second anti-reflection layer disposed on the first anti-reflection layer, including magnesium fluoride and having a refractive index smaller than a refractive index of the first anti-reflection layer.