Disclosed is a method for purifying a main gas, in particular helium, from a source gas stream comprising the main gas, a main impurity, in particular nitrogen, and optionally another, secondary impurity, in particular oxygen, the method comprising a step of partial condensation of the gas stream in order to extract therefrom impurities in liquid form, in particular the main impurity, and to produce a gas stream enriched with main gas, characterized in that the method comprises, before the partial condensation step, a step of injecting into the gas stream a compound in which the main impurity of the gas to be treated is soluble and having a saturation vapor pressure lower than the saturation vapor pressure of the main impurity.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

The present invention relates to an adsorption process for xenon recovery from a cryogenic liquid or gas stream wherein a bed of adsorbent is contacted with a xenon-containing liquid or gas stream selectively adsorbing the xenon from said stream. The adsorption bed is operated to at least near full breakthrough with xenon to enable a deep rejection of other stream components, prior to regeneration using the temperature swing method. After the stripping step, the xenon adsorbent bed is drained to clear out the liquid residue left in the nonselective void space and the xenon molecules in those void spaces is recycled upstream to the ASU distillation column for increasing xenon recovery. The xenon adsorbent bed is optionally purged with oxygen, followed by purging with gaseous argon at cryogenic temperature (≤160 K) to displace the oxygen co-adsorbed on the AgX adsorbent due to higher selectivity of argon over oxygen on the AgX adsorbent. By the end of this step, the xenon adsorbent bed is filled with argon and xenon. Then the entire adsorbent bed is heated indirectly without utilizing any of the purge gas for direct heating. Operating the adsorption bed to near full breakthrough with xenon and displacing the adsorbed oxygen and other residues with argon, prior to regeneration, along with indirect heating of the bed, enables production of a high purity product ≥40 vol % xenon from the adsorption bed and further enables safely heating without any purge gas and ease for downstream product collection, even in cases where hydrocarbons are co-present in the feed stream.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

The invention relates to a process for removing oxygen from liquid argon using a TSA (temperature swing adsorption) cyclical process that includes cooling an adsorbent bed to sustain argon in a liquid phase; supplying the adsorbent bed with a liquid argon feed that is contaminated with oxygen and purifying the liquid argon thereby producing an argon product with less oxygen contaminant than is in the initial liquid argon feed; draining the purified residual liquid argon product and sending purified argon out of the adsorbent bed. Regeneration of specially prepared adsorbent allows the adsorbent bed to warm up to temperatures that preclude the use of requiring either vacuum or evacuation of adsorbent from the bed.

In a helium purification process, a stream containing at least 10% of helium, at least 10% of nitrogen in addition to hydrogen and methane is separated to form a helium-enriched stream containing hydrogen, a first stream enriched in nitrogen and in methane and a second stream enriched in nitrogen and in methane, the helium-enriched stream is treated to produce a helium-rich product and a residual gas containing water, the residual gas is treated by adsorption (TSA) to remove the water and the regeneration gas from the adsorption is sent to a combustion unit (O).

A method and system for purification of helium and CO.sub.2 from a stream containing at least Helium, CO2, nitrogen or methane uses a combination of cryogenic, membrane and adsorption technologies.

In a helium purification process, a stream containing at least 10% of helium, at least 10% of nitrogen in addition to hydrogen and methane is separated to form a helium-enriched stream containing hydrogen, a first stream enriched in nitrogen and in methane and a second stream enriched in nitrogen and in methane, the helium-enriched stream is treated to produce a helium-rich product and a residual gas containing water, the residual gas is treated by adsorption (TSA) to remove the water and the regeneration gas from the adsorption is sent to a combustion unit (O).

In a helium purification process, a stream containing at least 10% of helium, at least 10% of nitrogen in addition to hydrogen and methane is separated to form a helium-enriched stream containing hydrogen, a first stream enriched in nitrogen and in methane and a second stream enriched in nitrogen and in methane, the helium-enriched stream is treated to produce a helium-rich product and a residual gas containing water, the residual gas is treated by adsorption (TSA) to remove the water and the regeneration gas from the adsorption is sent to a combustion unit (O).