Disclosed is a method for purifying a main gas, in particular helium, from a source gas stream comprising the main gas, a main impurity, in particular nitrogen, and optionally another, secondary impurity, in particular oxygen, the method comprising a step of partial condensation of the gas stream in order to extract therefrom impurities in liquid form, in particular the main impurity, and to produce a gas stream enriched with main gas, characterized in that the method comprises, before the partial condensation step, a step of injecting into the gas stream a compound in which the main impurity of the gas to be treated is soluble and having a saturation vapor pressure lower than the saturation vapor pressure of the main impurity.

System for purifying argon by cryogenic distillation, comprising a single column surmounted by a top-end condenser, a fluid inlet in the lower part of the column, a fluid outlet in the upper part of the column, and N distillation sections where N≥4, of which at least the two uppermost sections of the column are equipped respectively with a first liquid distributor and with a second liquid distributor, the second distributor being capable of performing a function of mixing together liquids that fall onto the distributor, each of the first and second distributors being positioned above the respective section and of which the two lowermost sections of the column are respectively equipped with a (N−1)th and an Nth liquid distributor capable of performing a function of mixing together liquids that fall onto the distributor, and which is arranged above the respective section, the first, second, (N−1)th and Nth distributors each being dimensioned to contain a maximum height of liquid head, that (those) of the first and second distributors being greater than that (those) of the (N−1)th and Nth distributors.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Cavitand compositions that comprise void spaces are disclosed. The void spaces may be empty, which means that voids are free of guest molecules or atoms, or the void spaces may comprise guest molecules or atoms that are normally in their gas phase at standard temperature and pressure. These cavitands may be useful for industrial applications, such as the separation or storage of gasses. Novel cavitand compounds are also disclosed.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

A process comprising: subjecting a process gas containing NOx to a stage for absorption of NOx in a suitable absorption means, obtaining nitric acid and a tail gas containing nitrogen, argon and residual NOx; subjecting said tail gas to a treatment which comprises at least one NOx removal stage, obtaining a conditioned tail gas; subjecting at least a portion of said conditioned tail gas to a separation treatment, obtaining a product stream containing argon and a product stream containing nitrogen.

A process comprising: subjecting a process gas containing NOx to a stage for absorption of NOx in a suitable absorption means, obtaining nitric acid and a tail gas containing nitrogen, argon and residual NOx; subjecting said tail gas to a treatment which comprises at least one NOx removal stage, obtaining a conditioned tail gas; subjecting at least a portion of said conditioned tail gas to a separation treatment, obtaining a product stream containing argon and a product stream containing nitrogen.

Cavitand compositions that comprise void spaces are disclosed. The void spaces may be empty, which means that voids are free of guest molecules or atoms, or the void spaces may comprise guest molecules or atoms that are normally in their gas phase at standard temperature and pressure. These cavitands may be useful for industrial applications, such as the separation or storage of gasses. Novel cavitand compounds are also disclosed.

Cavitand compositions that comprise void spaces are disclosed. The void spaces may be empty, which means that voids are free of guest molecules or atoms, or the void spaces may comprise guest molecules or atoms that are normally in their gas phase at standard temperature and pressure. These cavitands may be useful for industrial applications, such as the separation or storage of gasses. Novel cavitand compounds are also disclosed.