A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner. The phosphorus source carrier includes a phosphorus source carrier main body, a phosphorus source carrier upper cover, a heating element base arranged at an inner bottom of the phosphorus source carrier main body, and a heating element arranged on the heating element base; a heat insulation layer is wrapped on an outer wall of the phosphorus source carrier; and an induction coil is arranged between the heat insulation layer and an inner wall of the shielding carrier box. By improving a device and method, the system stability can be improved, and an entire synthesis system achieves quantitative synthesis, which lowers the risk of explosion of the phosphorus source carrier.

The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass. ##STR00001## (For definition of R, see the specification.)

Provided are semiconductor particles including a Group 12-16 semiconductor including a Group 12 element and a Group 16 element, a Group 13-15 semiconductor including a Group 13 element and a Group 15 element, or a Group 14 semiconductor including a Group 14 element, the semiconductor particles having a plasma frequency of 1.7×10.sup.14 rad/s to 4.7×10.sup.14 rad/s and a maximum length of 1 nm to 2,000 nm; and a dispersion, a film, an optical filter, a building member, or a radiant cooling device, in all of which the semiconductor particles are used.

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 515 nm to 535 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 15 nm or more, (2) a standard deviation of a peak wavelength of the emission spectrum is 12 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 2 nm or more.

System for synthesis of colloidal nanomaterial includes a multi-stage modular flow reactor that includes four distinct reactor modules for in-flow synthesis of colloidal nanomaterial. The system further includes a computer module for monitor and control of operations of the four reactor modules.

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. ##STR00001##
(R is as defined in the specification.)

Proposed are a layered compound having indium and phosphide, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by K.sub.1-xIn.sub.yP.sub.z (0≤x≤1.0, 0.75≤y≤1.25, 1.25≤z≤1.75).

The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

A method for producing a Group III-V semiconductor nanoparticle by flow reaction, including: introducing a solution of compound containing Group III element into a first flow channel, introducing a solution of compound containing Group V element into a second flow channel, and combining the solutions to produce nanoparticles, in which the combining portion is constituted by a multi-layered tubular mixer, one of the solutions is allowed to flow through a flow channel in the smallest tube of the mixer, and the other of the solutions is allowed to flow through a flow channel adjacent to the flow channel in the smallest tube, and a value of a ratio of linear velocity of the solution flowing in the flow channel adjacent to the flow channel in the smallest tube to linear velocity of the solution flowing in the flow channel in the smallest tube is a specific value.

A method of producing core/shell semiconductor nanoparticles, the method comprising a shell formation step of adding a solution of group VI element precursor while adding a solution of zinc branched chain carboxylate to a core particle-dispersed solution to allow the zinc branched chain carboxylate to react with the group VI element precursor in presence of the core particles for forming a shell containing zinc and the group VI element on surfaces of the core particles. The present invention can provide a simple semiconductor nanoparticle production method of producing core/shell semiconductor nanoparticles with excellent optical properties when two or more types of the shell precursors are used to produce the core/shell semiconductor nanoparticles.