The present invention provides a novel solution or route for metal phosphide (MP.sub.x) nanomaterials from the thermal decomposition of metal bis[bis(diisopropylphosphino)amide], M[N(PPri.sub.2).sub.2].sub.2, and/or single-source precursors. Synthetic routes to MP.sub.x nanomaterials may be used in energy applications including batteries, semiconductors, magnets, catalyst, lasers, inks, electrocatalysts and photodiodes.

An object of the present invention is to provide a core shell particle having high luminous efficacy and excellent durability; a method of producing the same; and a film formed of the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; and a second shell which covers at least a part of the first shell, in which the core shell particle includes a protective layer containing a metal oxide that covers at least a part of the second shell, and at least a part of a surface of the protective layer includes coordination molecules.

The purpose of the present invention is to provide a method for producing a quantum dot having narrow particle-size distribution with high reproducibility even when an amino-substituted organophosphine precursor is used in synthesis of the quantum dot. The method for producing a quantum dot according to one aspect of the present invention includes the steps of: combining a Group IIIB precursor and an organophosphine precursor with each other to form a precursor mixture, and heating the precursor mixture to form a solution of a Group IIIB phosphide quantum dot, wherein the organophosphine precursor comprises one or more amino sub stituents, and at least one parent amine of the one or more amino sub stituents has a boiling point of 160 C. or higher at standard atmospheric pressure.

An object of the present invention is to provide a core shell particle having high luminous efficacy and excellent durability; a method of producing the same; and a film formed of the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; and a second shell which covers at least a part of the first shell, in which the core shell particle includes a protective layer containing a metal oxide that covers at least a part of the second shell, and at least a part of a surface of the protective layer includes coordination molecules.

Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby down-converting light from the semiconductor material.

Methods and systems for producing nanostructure materials are provided. In one aspect, a process is provided that comprises a) heating one or more nanostructure material reagents by 100 C. or more within 5 seconds or less; and b) reacting the nanostructure material reagents to form a nanostructure material reaction product. In a further aspect, a process is provided comprising a) flowing a fluid composition comprising one or more nanostructure material reagents through a reactor system; and b) reacting the nanostructure material reagents to form a nanostructure material reaction product comprising Cd, In or Zn. In a yet further aspect, methods are provided that include flowing one or more nanostructure material reagents through a first reaction unit; cooling the one or more nanostructure material reagents or reaction product thereof that have flowed through the first reaction unit; and flowing the cooled one or more nanostructure material reagents or reaction product thereof through a second reaction unit.

A method for preparing semiconductor nanocrystals includes reacting one or more semiconductor nanocrystal precursors in a liquid medium in the presence of a boronic compound at a reaction temperature resulting in semiconductor nanocrystals. Semiconductor nanocrystals are also disclosed.

The present invention provides a novel solution or route for metal phosphide (MP.sub.x) nanomaterials from the thermal decomposition of metal bis[bis(diisopropylphosphino)amide], M[N(PPri.sub.2).sub.2].sub.2, and/or single-source precursors. Synthetic routes to MP.sub.x nanomaterials may be used in energy applications including batteries, semiconductors, magnets, catalyst, lasers, inks, electrocatalysts and photodiodes.

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 605 nm to 655 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 28 nm or less, (2) a standard deviation of a peak wavelength of the emission spectrum is 10 nm or more and 30 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 12 nm or less.

Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby down-converting light from the semiconductor material.