Methods for forming a graphene film on a silicon carbide material are provided, along with the resulting coated materials. The method can include: heating the silicon carbide material to a growth temperature (e.g., about 1,000° C. to about 2,200° C.), and exposing the silicon carbide material to a growth atmosphere comprising a halogen species. The halogen species reacts with the silicon carbide material to remove silicon therefrom. The halogen species can comprise fluorine (e.g., SiF.sub.4, etc.), chlorine (e.g., SiCl.sub.4), or a mixture thereof.

The present invention relates to a method for assembling molecules on the surface of a two-dimensional material formed on a substrate, the method comprises: forming a spacer layer comprising at least one of an electrically insulating compound or a semiconductor compound on the surface of the two-dimensional material, depositing molecules on the spacer layer, annealing the substrate with spacer layer and the molecules at an elevated temperature for an annealing time duration, wherein the temperature and annealing time are such that at least a portion of the molecules are allowed to diffuse through the spacer layer towards the surface of the two-dimensional material to assemble on the surface of the two-dimensional material. The invention also relates to an electronic device.

The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially. Moreover, a method for producing graphene according to the present invention can form monolayer graphene by epitaxially growing graphene while increasing the growth rate of graphene.

The present invention provides a method for the production of an electronic device, the method comprising: (i) providing a substrate comprising first and second layers on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, (ii) supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on a surface of the first layer of the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, (iii) selectively laser ablating the graphene to expose one or more portions of the surface of the first layer of the substrate, and (iv) selectively laser ablating the surface of the first layer of the substrate to expose one or more portions of the second layer of the substrate, wherein the first layer is an electrically conductive layer and the second layer is an electrically insulative layer, or wherein the second layer is an electrically conductive layer and the first layer is an electrically insulative layer.

A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

A weakly coupled enhanced graphene film includes an enhanced graphene structure based on weak coupling, wherein the enhanced graphene structure based on weak coupling comprises a plurality of graphene units stacked vertically; the graphene unit is a single graphene sheet, or consists of two or more graphene sheets stacked in AB form; two vertically adjacent graphene units are weakly coupled, to promote the hot electron transition and increase the joint density of states, thereby increasing the number of hot electrons in high-energy states; the stacking direction of the graphene units in the graphene structure is in the thickness direction of the graphene film; and the graphene film enhances the accumulation of hot electrons in high-energy states by the enhanced graphene structure based on weak coupling.

A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.

A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.

The present disclosure relates to a polymer for transferring graphene, including: polystyrene; and a compound represented by the following Chemical Formula 1: ##STR00001## (in Chemical Formula 1, R.sub.1 and R.sub.2 are each independently H, linear or branched C.sub.1-C.sub.20 alkyl, which can be substituted, and C.sub.6-C.sub.20 aryl, which can be substituted, and the substitution is carried out with C.sub.1-C.sub.6 alkyl or C.sub.6-C.sub.20 aryl, and n is 1 to 10).

Embodiments relate to a layered material (having a substrate, at least a buffer layer, with zero or more growth layers) that has been intercalated via a process that decouples (physically and electronically) the buffer layer from the substrate, thereby resulting in the creation of few-atom thick metal layers that exhibit a range of optical properties, including plasmonic or electronic resonance, that enables superior optical (e.g. Raman) detection of molecules.