A reducing material including a two-dimensional hydrogen boride-containing sheet having a two-dimensional network composed of (BH).sub.n (n≥4).

A composite including a two-dimensional hydrogen boride-containing sheet having a two-dimensional network composed of (BH).sub.n (n≥4) and a metal nanoparticle.

A reduction method including: a step of dispersing the reducing material according to any one of Claims 1 to 5 in an organic solvent to prepare a dispersion liquid containing the reducing material; and a step of reducing a metal ion having a redox potential which is given as a standard electrode potential of −0.26 V/SHE or higher by mixing the dispersion liquid with the metal ion.

The present disclosure relates to a method for producing a tetrahydroborate, the method including a plasma treatment step of exposing a borate to a hydrogen plasma.

Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

Disclosed is a method for preparing an elemental material by reduction using monoatomic carbon, comprising: in a melt medium at a temperature of from 300° C. to 1500° C., cracking an organic carbon source into atomic carbon and dissolving the atomic carbon in the melt medium, allowing the atomic carbon to reduce an elemental precursor compound present in the melt medium by an oxidation-reduction reaction to generate an elemental material, and obtaining the elemental material by supersaturating and crystallizing. The method of the present invention can prepare the elemental materials with high quality by self-crystallization growth at a lower temperature and at a lower cost.

A method for obtaining solid-state metal borohydrides without toxic precursors and expensive solvents includes dry mixing of metal hydrides and metal polyhydro-closo-borate starting materials. High pressure and heating is also used in the method. These materials can be used for hydrogen storage, general reducing agents, organic synthesis, wastewater treatment, and paper pulp bleaching.

A method for manufacturing an alloy formed from a boride of a precious metal, may involve reacting a source of the precious metal with a source of boron in a salt or a mixture of salts in the molten state. An alloy formed from a boride of a precious metal may include crystalline nanoparticles of M.sub.xB.sub.y with M being a precious metal, distributed in an amorphous matrix of B or in an amorphous matrix of B and of M.sub.zB.sub.a.

A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

A boron structure body includes boron having each concentration of Ti, Al, Fe, Cr, Ni, Co, Cu, W, Ta, Mo and Nb being 0.1 ppmw or less and having a thickness of 0.8 to 5 mm. The boron structure body may have a tubular shape, and when used as a doping agent, a ratio of .sup.11B that is an isotope may be 95 mass % or more. The boron structure body can be easily crushed, and a high-purity boron powder having an average particle diameter of 0.5 to 3 mm and having each metal impurity concentration of 0.3 ppmw or less can be obtained.

Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.