This invention in one aspect relates to a method of synthesizing a self-assembled mixed-dimensional heterostructure including 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). The method includes depositing boron on a substrate to grow borophene thereon at a substrate temperature in an ultrahigh vacuum (UHV) chamber; sequentially depositing 4,4″-dibromo-p-terphenyl on the borophene grown substrate at room temperature in the UHV chamber to form a composite structure; and controlling multi-step on-surface coupling reactions of the composite structure to self-assemble a borophene/graphene nanoribbon mixed-dimensional heterostructure. The borophene/aGNR lateral heterointerfaces are structurally and electronically abrupt, thus demonstrating atomically well-defined metal-semiconductor heterojunctions.

A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

A method for producing a tetrahydroborate is disclosed. The method includes a plasma treatment step of exposing a borate to a hydrogen plasma. The method also includes that the plasma treatment is performed using hydrogen plasma generated by microwave or RF excitation, and the plasma treatment is performed while heating the borate at a temperature between 40° C. and 300° C.

A hydrogen storage composite material includes: a graphene oxide framework provided as a porous structure and having an average pore diameter of 1 to 2 nm; and the graphene oxide framework is impregnated with a metal hydride, the graphene oxide framework comprises: a graphene oxide; and a linker connecting the graphene oxide.

An allotrope-specific reagent includes a hydride molecule in complex with a specified elemental allotrope. The elemental allotrope included in the complex substantially retains a specified allotropic structure of the bulk element. For example, the reagent can contain a specified allotrope of carbon, such as amorphous carbon, diamond, or graphite. The allotrope-specific reagent can be useful for the synthesis of allotropic nanoparticles. A method for synthesizing the allotrope-specific reagent includes a step of ball-milling a mixture that includes a bulk hydride molecule, such as lithium borohydride powder, and a powder of a specified elemental allotrope.

An allotrope-specific reagent includes a hydride molecule in complex with a specified elemental allotrope. The elemental allotrope included in the complex substantially retains a specified allotropic structure of the bulk element. For example, the reagent can contain a specified allotrope of carbon, such as amorphous carbon, diamond, or graphite. The allotrope-specific reagent can be useful for the synthesis of allotropic nanoparticles. A method for synthesizing the allotrope-specific reagent includes a step of ball-milling a mixture that includes a bulk hydride molecule, such as lithium borohydride powder, and a powder of a specified elemental allotrope.

A powder boronizing composition comprising: a. 0.5 to 4.5 wt % of a boron source selected from B.sub.4C, amorphous boron, calcium hexaboride, borax or mixtures thereof; b. 45.5 to 88.5 wt % of a diluent selected from SiC, alumina or mixtures thereof; c. 1.0 to 20.0 wt % of an activator selected from KBF.sub.4, ammonia chloride, cryolite or mixtures thereof; and d. 10.0 to 30.0 wt % of a sintering reduction agent selected from carbon black, graphite or mixtures thereof.

A powder boronizing composition comprising: a. 0.5 to 4.5 wt % of a boron source selected from B.sub.4C, amorphous boron, calcium hexaboride, borax or mixtures thereof; b. 45.5 to 88.5 wt % of a diluent selected from SiC, alumina or mixtures thereof; c. 1.0 to 20.0 wt % of an activator selected from KBF.sub.4, ammonia chloride, cryolite or mixtures thereof; and d. 10.0 to 30.0 wt % of a sintering reduction agent selected from carbon black, graphite or mixtures thereof.

Described are gas storage medium and methods of storing source gases in the gas storage medium, particularly relating to using hydroxylated metal oxides or hydroxylated metalloid oxides as a storage medium for storing diborane.

Described are gas storage medium and methods of storing source gases in the gas storage medium, particularly relating to using hydroxylated metal oxides or hydroxylated metalloid oxides as a storage medium for storing diborane.