A method of producing boron trichloride, which includes: a metal chlorination step of bringing a gas containing chlorine gas into contact with raw boron carbide as boron carbide including, as an impurity, a metal other than boron, and allowing the metal to react with the chlorine gas in the gas containing the chlorine gas, to form a metal chloride and to obtain boron carbide containing the metal chloride; a removal step of removing the metal chloride from the boron carbide containing the metal chloride, obtained in the metal chlorination step; and a generation step of bringing a gas containing chlorine gas into contact with the boron carbide from which the metal chloride has been removed in the removal step, and allowing the boron carbide and the chlorine gas in the gas containing the chlorine gas to react with each other to generate boron trichloride.

A preparation method and application of a Na.sub.3Ba.sub.2(B.sub.3O.sub.6).sub.2F birefringent crystal, the crystal having a chemical formula of Na.sub.3Ba.sub.2(B.sub.3O.sub.6).sub.2F, and belonging to a hexagonal crystal system, the space group being P6.sub.3/m, and the lattice parameters comprising a=7.3490(6) , c=12.6340(2) , V=590.93(12) .sup.3, Z=2; the crystal is used for an infrared/deep ultraviolet waveband, and is an uniaxial negative crystal, n.sub.e<n.sub.o, the transmission range being 175-3,350 nm, the birefringence of 0.090 (3,350 nm)-0.240 (175 nm), and the crystal being grown by employing a melting method or a flux method; the crystal prepared via the method has a short growth cycle, high crystal quality and large crystal size, is easy to grow, cut, polish and store, is stable in the air, and difficult to deliquesce, and can be used for preparation of various polarization beam polarization beam splitter prism and infrared/deep ultraviolet waveband optical communication elements.

Provided is a method for producing boron trichloride capable of efficiently producing boron trichloride by suppressing the generation of byproducts resulting from water by sufficiently removing water from a reaction system. The method for producing boron trichloride includes: a dehydration step of bringing a chlorine-containing gas which contains chlorine gas and has a water content of 1 ppm by volume or less into contact with boron carbide at a temperature lower than a generation starting temperature at which the generation of the boron trichloride starts by the reaction between the boron carbide and the chlorine gas, and allowing water in the boron carbide to react with the chlorine gas in the chlorine-containing gas to remove the water contained in the boron carbide; and a generation step of allowing the boron carbide dehydrated in the dehydration step to react with the chlorine gas to generate boron trichloride.

The present invention aims to provide an electrolyte solution containing a quaternary ammonium salt as an electrolyte salt and is capable of providing an electrochemical device having a high capacitance retention and reducing generation of gas. The electrolyte solution of the present invention contains a solvent, a quaternary ammonium salt, and a nitrogen-containing unsaturated cyclic compound. The unsaturated cyclic compound is a nitrogen-containing unsaturated heterocyclic compound. The unsaturated cyclic compound excludes salts of the unsaturated cyclic compound and ionic liquids obtainable from the unsaturated cyclic compound.

A boron filled hybrid nanotube and a method for producing and rendering boron filled hybrid nanotubes suitable for applications are provided. A mixture of a boron containing nanowire producing compound and catalysts is prepared and ground for a predetermined time period. The ground mixture is subjected to a vapor deposition process including passing an inert gas over the ground mixture after adding a nanotube producing compound to the ground mixture or after passing a reactant gas on the ground mixture in a reactor at a configurable reaction temperature and a configurable reaction pressure for a configurable reaction time to produce the boron filled hybrid nanotubes with enhanced mechanical, thermal and electrical properties. Each boron filled hybrid nanotube includes one or more boron based nanowires embedded within one or more single walled or multi-walled nanotubes. The boron filled hybrid nanotubes are further purified and functionalized using acids, and/or bases, and/or surfactants.

A boron filled hybrid nanotube and a method for producing and rendering boron filled hybrid nanotubes suitable for applications are provided. A mixture of a boron containing nanowire producing compound and catalysts is prepared and ground for a predetermined time period. The ground mixture is subjected to a vapor deposition process including passing an inert gas over the ground mixture after adding a nanotube producing compound to the ground mixture or after passing a reactant gas on the ground mixture in a reactor at a configurable reaction temperature and a configurable reaction pressure for a configurable reaction time to produce the boron filled hybrid nanotubes with enhanced mechanical, thermal and electrical properties. Each boron filled hybrid nanotube includes one or more boron based nanowires embedded within one or more single walled or multi-walled nanotubes. The boron filled hybrid nanotubes are further purified and functionalized using acids, and/or bases, and/or surfactants.

Embodiments of the invention provide a method for atomic layer etching (ALE) of a substrate. According to one embodiment, the method includes providing a substrate, and exposing the substrate to hydrogen fluoride (HF) gas and a boron-containing gas to etch the substrate. According to another embodiment, the method includes providing a substrate containing a metal oxide film, exposing the substrate to HF gas to form a fluorinated surface layer on the metal oxide film, and exposing the substrate to a boron-containing gas to remove the fluorinated surface layer from the metal oxide film. The exposures may be repeated at least once to further etch the metal oxide film.

Embodiments of the invention provide a method for atomic layer etching (ALE) of a substrate. According to one embodiment, the method includes providing a substrate, and exposing the substrate to hydrogen fluoride (HF) gas and a boron-containing gas to etch the substrate. According to another embodiment, the method includes providing a substrate containing a metal oxide film, exposing the substrate to HF gas to form a fluorinated surface layer on the metal oxide film, and exposing the substrate to a boron-containing gas to remove the fluorinated surface layer from the metal oxide film. The exposures may be repeated at least once to further etch the metal oxide film.

The present invention is directed to a process for producing a molded polymeric article including: providing a polymerizable composition of a reaction mixture of at least the following components: a mold release agent of ionic fluoride and/or ionic fluoride precursor, and a polymeric organic material selected from thermosetting organic polymeric materials and thermoplastic organic materials; allowing the reaction mixture to undergo exothermic reaction; providing a mold having a first part and a second part spaced one from the other thereby forming a cavity there between; introducing the reaction mixture into the mold cavity wherein the reaction mixture is at a temperature of up to 130 C.; holding the mold at a temperature and for a time sufficient to cure the reaction mixture thereby forming a molded polymeric article within the mold; and removing the molded polymeric article from the mold.

Molded articles also are provided.

The present disclosure relates to the technical field of separation of boron isotopes, in particular to a device and method for cracking a boron trifluoride complex. The device for cracking the boron trifluoride complex includes a continuous feeding system, a rising film preheater, a falling film preheater, a boron trifluoride gas circulation pipeline, a separation chamber, a cracking tower, a gas-liquid separator, an impurity removal tower, and anisole storage tank. By employing a continuous feeding method, the device for cracking boron trifluoride complex shortens retention time of anisole at a high-temperature stage while ensuring a cracking rate of a boron trifluoride-anisole complex, reduces the thermal decomposition degree of anisole, maintains the purity of anisole, and greatly improves the utilization rate and production safety of anisole, thus ensuring continuous and stable production.