A process for obtaining borazane (NH.sub.3—BH.sub.3) includes introducing anhydrous liquid ammonia (NH.sub.3(l)) into a reactor thermostatically regulated to between a temperature θ.sub.1 and 40° C.; introducing, with stirring, into the reactor an amine borane complex (Am.BH.sub.3), the corresponding amine (Am) of which is soluble in anhydrous liquid ammonia only to a proportion of less than 10 g in 100 g of ammonia at 20° C., being introduced in an amount such that the mole ratio R=(NH.sub.3(l))/(Am.BH.sub.3) is greater than or equal to 5; stirring the mixture; stopping the stirring to obtain two demixed phases: a light phase constituted essentially of a solution of anhydrous liquid ammonia (NH.sub.3(l)) containing borazane; and a heavy phase constituted essentially of the amine corresponding to the amine borane complex introduced; isolating the borazane and drying under vacuum thereof; the temperature θ.sub.1 being greater than or equal to the melting point of the amine borane complex.

This disclosure relates to porous boron nitride and a method for preparing the same. The porous boron nitride of the present invention may be obtained by mixing a boron source with a nitrogen source, heating the mixture to form a compound, and then, extracting elements other than boron and nitrogen. The porous boron nitride of the present invention comprises both micropores and mesopoers, and it has a large specific surface area, and thus, may be usefully used in various fields.

This disclosure relates to porous boron nitride and a method for preparing the same. The porous boron nitride of the present invention may be obtained by mixing a boron source with a nitrogen source, heating the mixture to form a compound, and then, extracting elements other than boron and nitrogen. The porous boron nitride of the present invention comprises both micropores and mesopoers, and it has a large specific surface area, and thus, may be usefully used in various fields.

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m.sup.2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 μm and at most 1 μm, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa.Math.s.

This application relates to monolayers of Si.sub.2BN or C.sub.2BN, arranged in a graphiticized hexagonal arrangement. Each Si/C atom has a Si/C, B, and N nearest neighbor, while each B (N) has two Si/C's and one N (B) as nearest neighbors. The monolayer can be a 2D composition or can be “rolled” into a nanotubular 3D arm-chair or zig-zag configuration.

This application relates to monolayers of Si.sub.2BN or C.sub.2BN, arranged in a graphiticized hexagonal arrangement. Each Si/C atom has a Si/C, B, and N nearest neighbor, while each B (N) has two Si/C's and one N (B) as nearest neighbors. The monolayer can be a 2D composition or can be “rolled” into a nanotubular 3D arm-chair or zig-zag configuration.

A sulfide solid electrolyte material with favorable ion conductivity and high reduction resistance. The object is attained by providing sulfide solid electrolyte material comprising: Li element; Ge element; P element; and S element, wherein the sulfide solid electrolyte material peaks at a position of 2θ=29.58°±0.50° in X-ray diffraction measurement using CuKα ray, the sulfide solid electrolyte material does not peak at a position of 2θ=27.33°±0.50° in X-ray diffraction measurement using CuKα ray or when diffraction intensity at the peak of 2θ=29.58°±0.50° is regarded as I.sub.A and diffraction intensity at the peak of 2θ=27.33°±0.50° is regarded as I.sub.B, a value of I.sub.B/I.sub.A is less than 1.0, and part of the P element in a crystal phase peaking at the position of 2θ=29.58°±0.50° is substituted with a B element.

Provided are a scroll preparing method using a two-dimensional material and a scroll prepared thereby. The scroll preparing method comprises preparing a two-dimensional material. The two-dimensional material is scrolled by providing an amphiphilic substance having a hydrophilic portion and a hydrophobic portion on the two-dimensional material. As a result, a scroll composite including the amphiphilic substance disposed inside a scroll structure is formed.

A reaction method comprising combining a carbonyl-substituted arylboronic acid or ester and an α-effect amine in aqueous solution at a temperature between about −5 C to 55 C, and a pH between 2 and 8 to produce an adduct. A process is also provided comprising: contacting a composition having a boron atom bonded to a sp.sup.2 hybridized carbon, the boron having at least one labile substituent, conjugated with a cis-carbonyl, with an α-effect amine, in an aqueous medium for a time sufficient to form an adduct, which may proceed to further products.

An example compound according to an example of the present disclosure includes, among other possible things, a nanotube carrier, a moiety, a linker having first and second functional groups, wherein the first functional group is covalently linked to the nanotube carrier, and the second functional group is covalently linked to the moiety. An example method of making a nanotube compound according to the present disclosure is also disclosed.