Patent classifications
C01B35/14
Methods and Apparatuses for Making Nanomaterials in Space
Methods and apparatuses for making nanomaterials are disclosed. The methods involve passing one or more source materials through a high pressure and high temperature chamber with an open throat, and then allowing the reactants to expand into a lower pressure, lower temperature zone. The source material is non-stoichiometric and fuel-rich so that excess un-combusted primary source material can form the nanomaterials. In some cases, the apparatus may be in the form of a modified rocket engine. The methods may be used to make various materials including: carbon nanotubes, boron nitride nanomaterials, titanium dioxide, and any materials that are currently produced by flame synthesis, including but not limited to electrocatalysts. The methods may also be used to make nanomaterials outside the Earth's atmosphere. The methods can include making, coating, or repairing structures in space, such as antennae.
Preparation of nanosheets via ball milling in the presence of reactive gases
A process for producing a material in the form of nanosheets by ball milling of crystals of the material, wherein the ball milling takes place in the presence of a reactive gas.
Preparation of nanosheets via ball milling in the presence of reactive gases
A process for producing a material in the form of nanosheets by ball milling of crystals of the material, wherein the ball milling takes place in the presence of a reactive gas.
Method and apparatus for preparing boron nitride nanotubes by heat treating boron precursor prepared by using air-jet
A method and apparatus for preparing boron nitride nanotubes (BNNTs) according to an embodiment may ensure mass-production, may increase yield by reducing a production time, and may prepare BNNTs with high purity.
Boron nitride nanotube purification
Disclosed herein are processes for purifying as-synthesized boron nitride nanotube (BNNT) material to remove impurities of boron, amorphous boron nitride (a-BN), hexagonal boron nitride (h-BN) nanocages, h-BN nanosheets, and carbon-containing compounds. The processes include heating the BNNT materials at different temperatures in the presence of inert gas and a hydrogen feedstock or in the presence of oxygen.
Continuous boron nitride nanotube fibers
Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.
Method and apparatus for preparing boron nitride nanotubes by heat treating boron precursor prepared by using air-jet
A method and apparatus for preparing boron nitride nanotubes (BNNTs) according to an embodiment may ensure mass-production, may increase yield by reducing a production time, and may prepare BNNTs with high purity.
Method for preparing multi-layer hexagonal boron nitride film
The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.
Preparation of amine-boranes, including ammonia borane
Disclosed herein is a method for preparing amine-boranes.
METHOD FOR PRODUCING BORAZANE
A process for obtaining borazane (NH.sub.3—BH.sub.3) includes introducing anhydrous liquid ammonia (NH.sub.3(l)) into a reactor thermostatically regulated to between a temperature θ.sub.1 and 40° C.; introducing, with stirring, into the reactor an amine borane complex (Am.BH.sub.3), the corresponding amine (Am) of which is soluble in anhydrous liquid ammonia only to a proportion of less than 10 g in 100 g of ammonia at 20° C., being introduced in an amount such that the mole ratio R=(NH.sub.3(l))/(Am.BH.sub.3) is greater than or equal to 5; stirring the mixture; stopping the stirring to obtain two demixed phases: a light phase constituted essentially of a solution of anhydrous liquid ammonia (NH.sub.3(l)) containing borazane; and a heavy phase constituted essentially of the amine corresponding to the amine borane complex introduced; isolating the borazane and drying under vacuum thereof; the temperature θ.sub.1 being greater than or equal to the melting point of the amine borane complex.