The present invention provides a means of producing nitric oxide (NO) by photolysis of nitrous oxide (N.sub.2O) at ultraviolet wavelengths. One application is the production of a known concentration of NO in a diluent gas for calibration of analytical instruments that measure nitric oxide in gases such as exhaled breath, ambient air and automobile exhaust. A potentially important medical application is the production of NO for inhalation therapy, an advantage being that very little toxic NO.sub.2 gas is produced. The method is useful for producing NO for industrial applications as well. Advantages of this method of NO production include the use of a single, inexpensive, readily available reagent gas of very low toxicity. Furthermore, the concentration of NO produced can be easily controlled by varying the ultraviolet (UV) lamp intensity and relative gas flow rates. The method may also be applied to the production of controlled concentrations of other gases as well such as CO and F.sub.2 by using reagent gases other than N.sub.2O.

The present invention provides a means of producing nitric oxide (NO) by photolysis of nitrous oxide (N.sub.2O) at ultraviolet wavelengths. One application is the production of a known concentration of NO in a diluent gas for calibration of analytical instruments that measure nitric oxide in gases such as exhaled breath, ambient air and automobile exhaust. A potentially important medical application is the production of NO for inhalation therapy, an advantage being that very little toxic NO.sub.2 gas is produced. The method is useful for producing NO for industrial applications as well. Advantages of this method of NO production include the use of a single, inexpensive, readily available reagent gas of very low toxicity. Furthermore, the concentration of NO produced can be easily controlled by varying the ultraviolet (UV) lamp intensity and relative gas flow rates. The method may also be applied to the production of controlled concentrations of other gases as well such as CO and F.sub.2 by using reagent gases other than N.sub.2O.

Disclosed is a purification method for removing a metal component from a fluorine gas containing hydrogen fluoride and a metal component. This method includes a removing step for removing the hydrogen fluoride and the metal component therefrom by bringing the fluorine gas into contact with a solid metal fluoride to adsorb the hydrogen fluoride and the metal component on the metal fluoride. The content of the hydrogen fluoride in the fluorine gas before the removing step is 50 volume ppm to 1 volume %, relative to the total volume of the fluorine gas, the hydrogen fluoride and the metal component. The metal fluoride is preferably an alkali metal fluoride or an alkali earth metal fluoride. Surprisingly, the presence of hydrogen fluoride in a fluorine gas makes it possible to remove a metal component therefrom as an impurity as a result of adsorption thereof by a metal fluoride.

Disclosed is a purification method for removing a metal component from a fluorine gas containing hydrogen fluoride and a metal component. This method includes a removing step for removing the hydrogen fluoride and the metal component therefrom by bringing the fluorine gas into contact with a solid metal fluoride to adsorb the hydrogen fluoride and the metal component on the metal fluoride. The content of the hydrogen fluoride in the fluorine gas before the removing step is 50 volume ppm to 1 volume %, relative to the total volume of the fluorine gas, the hydrogen fluoride and the metal component. The metal fluoride is preferably an alkali metal fluoride or an alkali earth metal fluoride. Surprisingly, the presence of hydrogen fluoride in a fluorine gas makes it possible to remove a metal component therefrom as an impurity as a result of adsorption thereof by a metal fluoride.

A method and apparatus for generation of fluorine gas (F2) in situ at the point of use is provided. The portable fluorine generator includes a dilution system disposed within a housing and operable to mix a feed gas comprising fluorine with an inert gas. The portable fluorine generator further includes a plasma reactor unit disposed within the housing and operable to separate fluorine (F2) from the feed gas comprising fluorine.

A method and apparatus for generation of fluorine gas (F2) in situ at the point of use is provided. The portable fluorine generator includes a dilution system disposed within a housing and operable to mix a feed gas comprising fluorine with an inert gas. The portable fluorine generator further includes a plasma reactor unit disposed within the housing and operable to separate fluorine (F2) from the feed gas comprising fluorine.

Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF.sub.3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WF.sub.x formation.

Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF.sub.3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WF.sub.x formation.

Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.

Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.