Provided is a method of preparing a sparsely pillared organic-inorganic hybrid compound. The method of preparing an organic-inorganic hybrid compound includes: preparing a compound having a gibbsite structure by a method other than a hydrothermal synthesis method, using a trivalent metal cation source, an alkali imparting agent, and a first solvent (S10); and preparing an organic-inorganic hybrid compound by a method other than a hydrothermal synthesis method, using the compound of the gibbsite structure, a divalent metal cation source, dicarboxylic acid, and a second solvent (S20).

Provided is a method of preparing a sparsely pillared organic-inorganic hybrid compound. The method of preparing an organic-inorganic hybrid compound includes: preparing a compound having a gibbsite structure by a method other than a hydrothermal synthesis method, using a trivalent metal cation source, an alkali imparting agent, and a first solvent (S10); and preparing an organic-inorganic hybrid compound by a method other than a hydrothermal synthesis method, using the compound of the gibbsite structure, a divalent metal cation source, dicarboxylic acid, and a second solvent (S20).

A sparsely pillared organic-inorganic hybrid compound is provided. The sparsely pillared organic-inorganic hybrid compound includes: two inorganic material layers, each extending in one direction and facing each other; and an organic material layer disposed between the two inorganic material layers, wherein each of the inorganic material layers has a gibbsite structure in which a divalent metal cation is doped to an octahedral site, and the organic material layer includes a plurality of pillar portions, each of which is chemically bound to each of the two inorganic material layers such that the two inorganic material layers are connected to each other.

A sparsely pillared organic-inorganic hybrid compound is provided. The sparsely pillared organic-inorganic hybrid compound includes: two inorganic material layers, each extending in one direction and facing each other; and an organic material layer disposed between the two inorganic material layers, wherein each of the inorganic material layers has a gibbsite structure in which a divalent metal cation is doped to an octahedral site, and the organic material layer includes a plurality of pillar portions, each of which is chemically bound to each of the two inorganic material layers such that the two inorganic material layers are connected to each other.

A nano platelet gibbsite treated with compound of formula (OR.sup.a).sub.3Si—R.sup.b or of formula R.sup.c—COOH wherein R.sup.a equal to or different from each other is a C.sub.1-C.sub.10 alkyl radical; R.sup.b is a C.sub.5-C.sub.30 hydrocarbon radical and R.sup.c is a C.sub.5-C.sub.30 hydrocarbon radical is used as a catalyst support.

Systems, devices, and techniques for manufacturing a crystalline material (e.g., large crystal material) through the solid state conversion of a polycrystalline material are described. A device may be configured to concurrently heat a volume of ribbon, such as an alumina ribbon, using multiple heat sources. For example, a first heat source may heat a first volume of the ribbon and a second heat source may concurrently heat a second volume, for example, within the first volume, where the ribbon may comprise polycrystalline material. The concurrent heating may drive grain growth in the polycrystalline material in at least the second volume, which may convert the polycrystalline material to crystalline material having one or more grains that are larger than one or more grains of the polycrystalline material. The processed ribbon may include a large crystal material or a single crystal material.

Systems, devices, and techniques for manufacturing a crystalline material (e.g., large crystal material) through the solid state conversion of a polycrystalline material are described. A device may be configured to concurrently heat a volume of ribbon, such as an alumina ribbon, using multiple heat sources. For example, a first heat source may heat a first volume of the ribbon and a second heat source may concurrently heat a second volume, for example, within the first volume, where the ribbon may comprise polycrystalline material. The concurrent heating may drive grain growth in the polycrystalline material in at least the second volume, which may convert the polycrystalline material to crystalline material having one or more grains that are larger than one or more grains of the polycrystalline material. The processed ribbon may include a large crystal material or a single crystal material.

This application relates to a method of manufacturing an electrostatic chuck having good characteristics in heat dissipation, thermal shock resistance, and lightness. In one aspect, the method includes preparing a composite powder by ball-milling (i) aluminum or aluminum alloy powder and (ii) carbon-based nanomaterial powder. The method may also include preparing an electrode layer by sintering the composite powder through spark plasma sintering (SPS), and forming a dielectric layer on the electrode layer.

This application relates to a method of manufacturing an electrostatic chuck having good characteristics in heat dissipation, thermal shock resistance, and lightness. In one aspect, the method includes preparing a composite powder by ball-milling (i) aluminum or aluminum alloy powder and (ii) carbon-based nanomaterial powder. The method may also include preparing an electrode layer by sintering the composite powder through spark plasma sintering (SPS), and forming a dielectric layer on the electrode layer.

One object of the present invention is to provide an apparatus for producing inorganic spheroidized particles which can significantly reduce the amount of warming gas generated and suppress the generation of soot during combustion. The present invention provides an apparatus (10) for producing inorganic spheroidized particles, including a burner (11) for producing inorganic spheroidized particles, a vertical spheroidizing furnace (15), an ammonia supply source (12), an oxygen supply source (13), an ammonia supply line (L1) located between the ammonia supply source (12) and the burner (11) for producing inorganic spheroidized particles, and an oxygen supply line (L2) located between the oxygen supply source (13) and the burner (11) for producing inorganic spheroidized particles.