C01G17/006

GALLIUM-68 GENERATORS AND METHODS FOR MAKING SUCH GENERATORS
20210280334 · 2021-09-09 ·

Gallium-68 generators that are capable of producing gallium-68 from a germanium-68 source material are disclosed. The source material may be a matrix material (e.g., zeolite) in which germanium-68 is isomorphously substituted for central atoms in tetrahedra within the matrix material. Methods for forming gallium-68 generators are also disclosed.

NEW LITHIUM MIXED METAL SULFIDE WITH HIGH IONIC CONDUCTIVITY
20210155494 · 2021-05-27 ·

The present invention relates to a compound represented by the general formula Li.sub.2+2xM.sub.1-xZS.sub.4, wherein 0.3≤x≤0.9; wherein M is one or more elements selected from the group consisting of Pb, Mg, Ca, Ge and Sn; and wherein Z is one or more elements selected from the group consisting of Ge, Si, Sn and Al.

The present invention also relates to a method for preparing the material of the present invention, comprising the steps of: (a) providing a mixture of lithium sulfide Li.sub.2S, sulfides MS and ZS.sub.2, in a stoichiometric ratio ensuring Li.sub.2+2xM.sub.1-xZS.sub.4 to be obtained, wherein M, Z and x are as defined above; (b) pelletizing the mixture prepared in step (a); (c) heating at a maximum plateau temperature.

In still another aspect, the present invention relates to a use of the compound of the present invention as a solid electrolyte, in particular in an all solid-state lithium battery.

Method for preparing silicon and/or germanium nanowires

The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

Hexagonal 6H Barium Germanium Oxide, Method For Producing Same, Sintered Body, And Target

Provided are a barium germanium oxide having a 3-4 eV band gap, a method for producing the same, a sintered body thereof, and a target thereof. The barium germanium oxide includes at least Ba, Ge, and O, includes a crystal represented by a general formula of ABO.sub.3 (here, A includes at least Ba and B includes at least Ge), and has a hexagonal 6H-type perovskite structure.

Tris(trichlorosily1)dichlorogallylgermane, process for the preparation thereof and use thereof

A process can be used for the preparation of tris(trichlorosilyl)dichlorogallylgermane, which is a chlorinated, uncharged substance.

ANISOTROPIC MATERIALS AND METHODS OF FORMING ANISOTROPIC MATERIALS EXHIBITING HIGH OPTICAL ANISOTROPY

A method for forming a crystalline material having an anisotropic, quasi-one-dimensional crystal structure is disclosed. In various embodiments, the method includes: mixing a plurality of precursor materials together to form a combined precursor material, the plurality of precursor materials including a transition-metal ion or a main group ion and at least one of an alkaline earth ion or an alkali metal ion; and reacting the combined precursor material to obtain the crystalline material, the crystalline material having a formula ABX3, wherein A is the at least one of the alkaline earth ion or the alkali metal ion and B is the transition-metal ion surrounded by six anions (X), and wherein the quasi-one-dimensional anisotropic crystal provides a birefringence of at least 0.03, defined as the absolute difference in the real part of the complex-refractive-index values along different crystal axes, in at least a portion of one or N both of the visible-wave spectrum or the infrared spectrum.

Light valve comprising halide ABX.SUB.3 .perovskite particles

A light valve containing ABX.sub.3 perovskite particles (200) suspended in a liquid suspension (300) that can control light transmittance is provided. The preferable ABX.sub.3 perovskite particles (200) are halide ABX.sub.3 perovskite particles wherein A is at least one of Cs.sup.+, CH.sub.3NH.sub.3.sup.+, and Rb.sup.+, B is at least one of Pb.sup.2+, Ge.sup.2+, and Sn.sup.2+, and X is at least one of Cl.sup., Br.sup., and I.sup.. Use of the light valve in the manufacture of a light control device and a method of controlling light transmittance by using the light valve are also provided.

HALIDE ABX3 PEROVSKITE PARTICLES AND THEIR APPLICATION IN CONTROLLING PHOTO-FLUX

A light valve containing ABX.sub.3 perovskite particles (200) suspended in a liquid suspension (300) that can control light transmittance is provided. The preferable ABX.sub.3 perovskite particles (200) are halide ABX.sub.3 perovskite particles wherein A is at least one of Cs.sup.+, CH.sub.3NH.sub.3.sup.+, and Rb.sup.+, B is at least one of Pb.sup.2+, Ge.sup.2+, and Sn.sup.2+, and X is at least one of Cl.sup., Br.sup., and I.sup.. Use of the light valve in the manufacture of a light control device and a method of controlling light transmittance by using the light valve are also provided.

Materials for solid electrolyte
10879558 · 2020-12-29 · ·

The present disclosure relates to a material containing the elements Li, M, P, S and X wherein M=Si, Ge or Sn, and X=F, Cl, Br or I. The material can be used as a sulfide solid electrolyte material, notably for an all-solid-state lithium battery.

ORIENTED APATITE TYPE OXIDE ION CONDUCTOR AND METHOD FOR PRODUCING SAME
20200381760 · 2020-12-03 ·

An oriented apatite-type oxide ion conductor includes a composite oxide expressed as A.sub.9.33+x[T.sub.6.00yM.sub.y]O.sub.26.0+z, where A represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba, T represents an element including Si or Ge or both, and M represents one or two or more elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo, and where x is from 1.00 to 1.00, y is from 0.40 to less than 1.00, and z is from 3.00 to 2.00.