Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] M.sub.x−mA.sub.yB.sub.z (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x), and having ferroelectric-like properties.

Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

A pharmaceutical composition is provided comprising a highly soluble arsenic carbonate and/or bicarbonate compound and which is useful in the treatment of a variety of cancers, including acute promyelocytic leukaemia. The arsenic carbonate and/or bicarbonate salt acts as a solid, and so orally deliverable, improved bioequivalent delivery form of arsenic trioxide IV solutions.

Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] M.sub.x−mA.sub.yB.sub.z (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x), and having ferroelectric-like properties.

The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

A chalcogenide material and an electronic device are provided. The chalcogenide material may include 1-10 atomic percent (at %) of silicon, 10-20 at % of germanium, 25-35 at % of arsenic, 40-50 at % of selenium, and 1-10 at % of tellurium. The electronic device may include a switching element including a chalcogenide material, the chalcogenide material including 1-10 atomic percent (at %) of silicon, 10-20 at % of germanium, 25-35 at % of arsenic, 40-50 at % of selenium, and 1-10 at % of tellurium. The electronic device may further include a first electrode electrically coupled to the switching element and a second electrode electrically coupled to the switching element.

An optical thin film includes a support layer and a dielectric layer on the support layer. The dielectric layer has a refractive index greater than that of the support layer. The dielectric layer includes a compound ADX, which includes a Group 3 element A, a Group 5 element D, and an element X having an atomic weight smaller than an atomic weight of A or D. The optical thin film may exhibit light transmission having a high refractive index and low absorptivity.

A chalcogenide material and an electronic device are provided. The chalcogenide material may include 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic and 40-50 at % of selenium. The electronic device may include a semiconductor memory device, the semiconductor memory device including a first memory cell that includes a first switching element. The first switching element may include a chalcogenide material including 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic, and 40-50 at % of selenium.