The present disclosure provides a precursor solution of a semiconductor electrothermal film, which comprises component A, component B, and component C. The component A comprises the following components by weight: 2-10 parts of tin tetrachloride pentahydrate, 3-6 parts of stannous chloride and 0.3-1 part of glycerol, also comprises a pH regulator, the pH of the component A is 4.7-6.2; the component B comprises the following components by weight: 5-10 parts of conductivity regulator, the conductivity regulator is selected from a group consisting of antimony trichloride dihydrate, bismuth trioxide, aluminum oxide and thallium dioxide, 0.6-1 part chlorinated aluminum and a mixture thereof, also comprises a pH regulator, the pH of the component B is 4.7-5.0; the component C comprises the following components by weight: 0.5-0.7 parts of tin oxide, 0.8-1.5 parts of bismuth oxide and 15-25 parts of ethanol; also comprises 15-30 parts of distilled water. A preparation method of electrothermal film and electrothermal structure is further provided. The obtained semiconductor electrothermal film has good nature of resistance to sudden temperature changes, good temperature stability, attenuation resistance, fast heating speed, and high temperature resistance.

The invention relates to Eu.sup.2+-activated phosphors, to a process of its preparation, the use of these phosphors in electronic and electro optical devices, such as light emitting diodes (LEDs) and solar cells and especially to illumination units comprising said magnesium alumosilicate-based phosphors.

Production method for metal oxide fine particles includes: a step of mixing a fatty acid represented by C.sub.nH.sub.2nO.sub.2 (n=5 to 14) and a metal source consisting of a metal, metal oxide, or metal hydroxide of at least two metal elements selected from the group consisting of Zn, In, Sn, and Sb to obtain a mixture; a step of heating the mixture at a temperature that is equal to or higher than a melting temperature of the fatty acid and lower than a decomposition temperature of the fatty acid to obtain a metal soap which is a precursor of metal oxide fine particles; and a step of heating the precursor at a temperature that is equal to or higher than a melting temperature of the precursor and lower than a decomposition temperature of the precursor to obtain metal oxide fine particles having an average particle diameter of 80 nm or less.

Production method for metal oxide fine particles includes: a step of mixing a fatty acid represented by C.sub.nH.sub.2nO.sub.2 (n=5 to 14) and a metal source consisting of a metal, metal oxide, or metal hydroxide of at least two metal elements selected from the group consisting of Zn, In, Sn, and Sb to obtain a mixture; a step of heating the mixture at a temperature that is equal to or higher than a melting temperature of the fatty acid and lower than a decomposition temperature of the fatty acid to obtain a metal soap which is a precursor of metal oxide fine particles; and a step of heating the precursor at a temperature that is equal to or higher than a melting temperature of the precursor and lower than a decomposition temperature of the precursor to obtain metal oxide fine particles having an average particle diameter of 80 nm or less.

The present disclosure provides a precursor solution of a semiconductor electrothermal film, which comprises component A, component B, and component C. The component A comprises the following components by weight: 2-10 parts of tin tetrachloride pentahydrate, 3-6 parts of stannous chloride and 0.3-1 part of glycerol, also comprises a pH regulator, the pH of the component A is 4.7-6.2; the component B comprises the following components by weight: 5-10 parts of conductivity regulator, the conductivity regulator is selected from a group consisting of antimony trichloride dihydrate, bismuth trioxide, aluminum oxide and thallium dioxide, 0.6-1 part chlorinated aluminum and a mixture thereof, also comprises a pH regulator, the pH of the component B is 4.7-5.0; the component C comprises the following components by weight: 0.5-0.7 parts of tin oxide, 0.8-1.5 parts of bismuth oxide and 15-25 parts of ethanol; also comprises 15-30 parts of distilled water. A preparation method of electrothermal film and electrothermal structure is further provided. The obtained semiconductor electrothermal film has good nature of resistance to sudden temperature changes, good temperature stability, attenuation resistance, fast heating speed, and high temperature resistance.

Production method for metal oxide fine particles includes: a step of mixing a fatty acid represented by C.sub.nH.sub.2nO.sub.2 (n=5 to 14) and a metal source consisting of a metal, metal oxide, or metal hydroxide of at least two metal elements selected from the group consisting of Zn, In, Sn, and Sb to obtain a mixture; a step of heating the mixture at a temperature that is equal to or higher than a melting temperature of the fatty acid and lower than a decomposition temperature of the fatty acid to obtain a metal soap which is a precursor of metal oxide fine particles; and a step of heating the precursor at a temperature that is equal to or higher than a melting temperature of the precursor and lower than a decomposition temperature of the precursor to obtain metal oxide fine particles having an average particle diameter of 80 nm or less.

Production method for metal oxide fine particles includes: a step of mixing a fatty acid represented by C.sub.nH.sub.2nO.sub.2 (n=5 to 14) and a metal source consisting of a metal, metal oxide, or metal hydroxide of at least two metal elements selected from the group consisting of Zn, In, Sn, and Sb to obtain a mixture; a step of heating the mixture at a temperature that is equal to or higher than a melting temperature of the fatty acid and lower than a decomposition temperature of the fatty acid to obtain a metal soap which is a precursor of metal oxide fine particles; and a step of heating the precursor at a temperature that is equal to or higher than a melting temperature of the precursor and lower than a decomposition temperature of the precursor to obtain metal oxide fine particles having an average particle diameter of 80 nm or less.

A dispersion liquid contains antimony-doped tin oxide (ATO) particles and a solvent, a content of the antimony-doped tin oxide particles is 40% by mass or more, a volume average particle diameter of the antimony-doped tin oxide particles is 90 nm or less, and, in a color space by the L*a*b* color system, an L* value is 13.0 or less, an a* value is −2.0 or more and 0.0 or less, and a b* value is −13.0 or more and −10.0 or less.

Solid-state lithium ion electrolytes of lithium potassium element oxide based compounds are provided which contain an anionic framework capable of conducting lithium ions. The element atoms are Ir, Sb, I Nb and W. An activation energy of the lithium potassium element oxide compounds is from 0.15 to 0.50 eV and conductivities are from 10.sup.−3 to 22 mS/cm at 300K. Compounds of specific formulae are provided and methods to alter the materials with inclusion of aliovalent ions shown. Lithium batteries containing the composite lithium ion electrolytes are also provided. Electrodes containing the lithium potassium element oxide based materials and batteries with such electrodes are also provided.

Solid-state lithium ion electrolytes of lithium potassium element oxide based compounds are provided which contain an anionic framework capable of conducting lithium ions. The element atoms are Ir, Sb, I Nb and W. An activation energy of the lithium potassium element oxide compounds is from 0.15 to 0.50 eV and conductivities are from 10.sup.3 to 22 mS/cm at 300K. Compounds of specific formulae are provided and methods to alter the materials with inclusion of aliovalent ions shown. Lithium batteries containing the composite lithium ion electrolytes are also provided. Electrodes containing the lithium potassium element oxide based materials and batteries with such electrodes are also provided.