The present application relates to copper-doped double perovskites, for example, copper-doped double perovskites of the formula (I) and to uses thereof, for example as low-bandgap materials such as a semiconducting material in a device. The present application also relates to methods of tuning the bandgap of a Cs.sub.2SbAgZ.sub.6 double perovskite (for example, wherein Z is Cl) comprising doping the double perovskite with copper.
Cs.sub.2Sb.sub.1-aAg.sub.1-bCu.sub.2xZ.sub.6  (I)

The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection.

The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection.

A method, printed circuit board assembly (PCBA), and device comprising a PCBA are disclosed. The method includes obtaining a material comprising silver halide grains, incorporating the material into a PCBA having at least one component in contact with the material, detecting a variation in electrical properties of the at least one component that is above a threshold variation and, in response, enacting a data protection response. The PCBA includes a material comprising silver halide grains, at least one component in contact with the material, and a monitoring component. The monitoring component is configured to detect a variation in electrical properties of the at least one component that is above a threshold variation and, in response, enact a data protection response.

A method, printed circuit board assembly (PCBA), and device comprising a PCBA are disclosed. The method includes obtaining a material comprising silver halide grains, incorporating the material into a PCBA having at least one component in contact with the material, detecting a variation in electrical properties of the at least one component that is above a threshold variation and, in response, enacting a data protection response. The PCBA includes a material comprising silver halide grains, at least one component in contact with the material, and a monitoring component. The monitoring component is configured to detect a variation in electrical properties of the at least one component that is above a threshold variation and, in response, enact a data protection response.

One aspect relates to a method of manufacture of a composition, including providing a precursor formulation which includes at least silver chloride and an organic vehicle, wherein the precursor formulation includes agglomerates, and comminuting the precursor formulation, wherein the composition is obtained. One aspect further relates to a substrate which is at least partially coated with a coating including silver chloride, wherein the coating has an average size of agglomerates of 30 μm or less, to an electrochemical sensor including at least one of these coated substrates and a use of the composition or a wire which is coated with the composition.

One aspect relates to a method of manufacture of a composition, including providing a precursor formulation which includes at least silver chloride and an organic vehicle, wherein the precursor formulation includes agglomerates, and comminuting the precursor formulation, wherein the composition is obtained. One aspect further relates to a substrate which is at least partially coated with a coating including silver chloride, wherein the coating has an average size of agglomerates of 30 μm or less, to an electrochemical sensor including at least one of these coated substrates and a use of the composition or a wire which is coated with the composition.

The present application relates to copper-doped double perovskites, for example, copper-doped double perovskites of the formula (I) and to uses thereof, for example as low-bandgap materials such as a semiconducting material in a device. The present application also relates to methods of tuning the bandgap of a Cs.sub.2SbAgZ.sub.6 double perovskite (for example, wherein Z is Cl) comprising doping the double perovskite with copper.

Cs.sub.2Sb.sub.1-aAg.sub.1-bCu.sub.2xZ.sub.6(I)

An electrode material (1) includes: a porous support (2); and silver chloride (4) supported on the porous support (2). The porous support (2) is, for example, silica. The silica may be: wet-process silica such as precipitated silica or gelation method silica; dry-process silica; or the like.

An electrode material (1) includes: a porous support (2); and silver chloride (4) supported on the porous support (2). The porous support (2) is, for example, silica. The silica may be: wet-process silica such as precipitated silica or gelation method silica; dry-process silica; or the like.