Patent classifications
C03C17/3671
Innovation In High Performance Electro-Chromic Device Manufacturing Method
The invention relates to the manufacturing method of high performance electro-chromic devices containing transition metal oxide based compounds, wherein it comprises the steps of enlarging of the metal contact with Pt (Platinum) (1) sputtering method on one edge of the 80-150 nm thick Indium-Tin oxide alloy (ITO) (2), which was previously enlarged on the glass (3) by the sputter method, growing vertical nano-wall structures at 15-25 mTorr, 300-500° C. substrate temperature and at 3-45 minutes intervals on glass (3) with sputter method, by using transition metal chalcogen targets on previously enlarged ITO (2) with a thickness of 80-150 nm, oxidizing the grown structures in the oxidizing furnace for 10-60 minutes under oxygen gas in the temperature range 300-450° C., preparing the electro-chromic device by placing a counter glass/ITO (80-150 nm) in propylene carbonate (PC) to face 1 Mole/Liter Lithium perchlorate (LiClO4) ion-conducting electrolyte (6) with a 0.5-1 mm distance between them and closing it.
Liquid crystal display panel
The present invention relates to a liquid crystal display panel having a predetermined size, containing a wiring film formed of a metal, an insulating film containing an inorganic substance and a substrate formed of a non-alkali glass, in which the metal has the product of a Young's modulus (E) and a thermal expansion coefficient (α) at room temperature falling within a predetermined range, α of the inorganic substance is smaller than that of the non-alkali glass, the non-alkali glass has E of from 70 GPa to 95 GPa and α of from 32×10.sup.−7 to 45×10.sup.−7 (1/° C.) in which E and α satisfies a predetermined formula, and has a predetermined composition.
TREATING SULFIDE GLASS SURFACES AND MAKING SOLID STATE LAMINATE ELECTRODE ASSEMBLIES
Methods for making solid-state laminate electrode assemblies include methods of forming a solid electrolyte interphase (SEI) by ion implanting nitrogen and/or phosphorous into the glass surface by ion implantation.
OPTICAL SYSTEM, INSULATING GLAZING COMPRISING SUCH AN OPTICAL SYSTEM, PROCESS FOR MANUFACTURING THIS INSULATING GLAZING AND PROCESS FOR PROTECTING AN OPTICAL SYSTEM
An system includes an optical element including a glazing-function substrate and an electrochromic stack formed on this substrate, this electrochromic stack including a first transparent conductive layer, a working electrode arranged above the first transparent conductive layer, a counter-electrode arranged above said working electrode, a second transparent conductive layer arranged above the counter-electrode, lithium ions introduced into the electrochromic stack, and optionally a separate layer of an ionic conductor, the latter layer being intermediate between the electrode and the counter-electrode, a protective layer arranged on the electrochromic stack, the protective layer including an inorganic lubricating compound.
PRECURSOR SOLUTION FOR COPPER-ZINC-TIN-SULFUR THIN FILM SOLAR CELL, PREPARATION METHOD THEREFOR, AND USE THEREOF
Disclosed are a precursor solution for a copper-zinc-tin-sulfur (CZTS) thin film solar cell, a preparation method therefor, and the use thereof. The present invention discloses two types of simple metal complexes which are capable of formulating a high-quality precursor solution.
LIQUID CRYSTAL DISPLAY PANEL
The present invention relates to a liquid crystal display panel having a predetermined size, containing a wiring film formed of a metal, an insulating film containing an inorganic substance and a substrate formed of a non-alkali glass, in which the metal has the product of a Young's modulus (E) and a thermal expansion coefficient (α) at room temperature falling within a predetermined range, α of the inorganic substance is smaller than that of the non-alkali glass, the non-alkali glass has E of from 70 GPa to 95 GPa and a of from 32×10.sup.−7 to 45×10.sup.−7 (1/° C.) in which E and α satisfies a predetermined formula, and has a predetermined composition.
PLATE-UP HYBRID STRUCTURES USING MODIFIED GLASS PATTERNING PROCESSES
Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a core, where the core comprises glass. In an embodiment, a via opening is formed through the core. In an embodiment, the via opening has an aspect ratio (depth:width) that is approximately 5:1 or greater. In an embodiment, the electronic package further comprises a via in the via opening, where the via opening is fully filled.
LIQUID CRYSTAL DISPLAY PANEL
The present invention relates to a liquid crystal display panel having a predetermined size, containing a wiring film formed of a metal, an insulating film containing an inorganic substance and a substrate formed of a non-alkali glass, in which the metal has the product of a Young's modulus (E) and a thermal expansion coefficient (α) at room temperature falling within a predetermined range, α of the inorganic substance is smaller than that of the non-alkali glass, the non-alkali glass has E of from 70 GPa to 95 GPa and α of from 32×10.sup.−7 to 45×10.sup.−7 (1/° C.) in which E and a satisfies a predetermined formula, and has a predetermined composition.
VENDING MACHINES WITH LARGE AREA TRANSPARENT TOUCH ELECTRODE TECHNOLOGY, AND/OR ASSOCIATED METHODS
Certain example embodiments relate to vending machines with large area transparent touch electrode (LATTE) technology, and/or associated methods. By using the low-E Ag-based coatings described herein, it is possible to create new vending machine user interfaces that are more interesting and interactive than conventional interfaces. Touch-based user interfaces may be useful in vending, attract, and game-playing modes into which example vending machines may be placed and under which they may be operated.
COPPER-ALLOY CAPPING LAYERS FOR METALLIZATION IN TOUCH-PANEL DISPLAYS
In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.