Disclosed are a transition metal chalcogenide thin-layer material, a preparation method and an application thereof. The preparation method comprises: uniformly spreading a transition metal source between two substrates to prepare a sandwich structure; performing a heat treatment on the sandwich structure to fuse and bond the two substrates together, and performing a chemical vapor deposition reaction on a chalcogen element source and the fused and bonded sandwich structure under the protection of a protective gas, wherein the transition metal source is heated to dissolve and diffuse at a reaction temperature, separated out from surfaces of the substrates, and reacts with the chalcogen element source. The prepared thin-layer material is uniformly distributed in a centimeter-level substrate.

A conductive material including a first element selected from a transition metal, a platinum-group element, a rare earth element, and a combination thereof, a second element having an atomic radius which is 10 percent less than to 10 percent greater than an atomic radius of the first element, and a chalcogen element, wherein the conductive material has a layered crystal structure.

A chalcopyrite compound-based thin film in which an alkali metal is incorporated, and a method of fabricating the same are provided. The chalcopyrite compound-based thin film in which an alkali metal is incorporated may have improved film characteristics such as excellent chalcopyrite crystal characteristics and improved surface characteristics, and may exhibit improved optical characteristics by control of the distribution of constituent elements in the chalcopyrite compound layer. Accordingly, performance of a solar cell including the chalcopyrite compound-based thin film may be improved. The chalcopyrite compound-based thin film may be easily fabricated through a solution process.

A glass article having a dimpled glass bump formed integrally thereon by laser-irradiation methods. The glass bump includes a lower region connected to an upper region by an inflection region. The lower region projects from a surface of the glass article and is defined by concavely rounded sides with a radius of curvature R1. The upper region includes a transition portion and a top surface. The transition portion is defined by convexly rounded sides with a radius of curvature R2. The transition portion connects to the lower portion via the inflection region. The upper portion connects to the transition portion and is defined by a concavely rounded top portion between convexly rounded top portions.

An optical element that features high transmission and low reflectivity at infrared wavelengths is described. The optical element includes a substrate, an adhesion layer on the substrate, and an anti-reflection coating. Substrates include chalcogenide glasses, InAs, and GaAs. Adhesion layers include Se, ZnSe, Ga.sub.2Se.sub.3, Bi.sub.2Se.sub.3, In.sub.2Se.sub.3, ZnS, Ga.sub.2S.sub.3 and In.sub.2S.sub.3. Anti-reflection coatings include one or more layers of DLC (diamond-like carbon), ZnS, ZnSe, Ge, Si, HfO.sub.2, Bi.sub.2O.sub.3, GdF.sub.3, YbF.sub.3, In.sub.2Se.sub.3, and YF.sub.3. The optical elements show high durability and good adhesion when subjected to thermal shocks, temperature cycling, abrasion, and humidity.

Disclosed is a liquid-phase alloy catalyst, method of manufacturing same and two-dimensional chalcogenide thin film comprising thermodynamically induced grain boundary in monolayer crystal using same. In detail, a liquid-phase alloy catalyst for synthesizing a two-dimensional chalcogenide thin film, the liquid-phase alloy catalyst comprising an alloy including an alkali metal, a transition metal and an oxygen atom. The present disclosure has the effect of stably providing a uniform chemical environment through an independent liquid alloy catalyst in a chemically non-uniform synthetic environment.