C03C23/004

MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE PLASMA PROCESSING METHOD

Disclosed is a microwave plasma processing apparatus including: a chamber that accommodates a workpiece; a microwave generating source that generates microwaves; a waveguide unit that guides the microwaves toward the chamber; a planar antenna made of a conductor having a plurality of slots that radiate the microwaves toward the chamber; a microwave-transmitting plate made of a dielectric material that constitutes a top wall of the chamber and transmits the microwaves radiated from the plurality of slots; a gas supply mechanism that supplies a gas into the chamber; and an exhaust mechanism that exhausts an atmosphere in the chamber. The planar antenna includes a plurality of slot groups each forming one unit including one or more of the slots, and the slots are formed so as to form an odd number of the slot groups equal to or more than three in a circumferential direction.

GLASS CYLINDER FOR A PISTON-CYLINDER ASSEMBLY WITH REDUCED FRICTION, AND METHOD FOR TREATING A GLASS CYLINDER FOR A PISTON-CYLINDER ASSEMBLY

A method of treating a glass cylinder for a piston-cylinder arrangement for reducing the friction of a piston on an inner cylinder wall of the glass cylinder includes: elevating surface energy of glass of an interior bounded by the inner cylinder wall and hence lowering a contact angle of the glass with water. The contact angle is lowered by: a gas discharge that acts on the glass at the inner cylinder wall and is generated by an electric or electromagnetic field; or the action of ozone on the glass surface. The glass with the lowered contact angle is contacted with water to form a water film on the contacted glass.

Modifying bulk properties of a glass substrate

Embodiments of the disclosure provide an apparatus and methods for localized stress modulation for overlay and substrate distortion using electron or ion implantation directly to a glass substrate. In one embodiment, a process for modifying a bulk property of a glass substrate generally includes identifying a stress pattern of a glass substrate, determining doping parameters to correct a defect (e.g., overlay error or substrate distortion) based on the stress pattern, and providing a treatment recipe to a treatment tool, wherein the treatment recipe is formulated according to the doping parameters. The process may further include performing a doping treatment process on the glass substrate using the treatment recipe to correct the overlay error or substrate distortion. In some embodiments, the treatment recipe is determined by comparing the stress pattern with a database library containing data correlating stress changes in glass substrates to various doping parameters.

Glass cylinder for a piston-cylinder assembly with reduced friction, and method for treating a glass cylinder for a piston-cylinder assembly

A method of treating a glass cylinder for a piston-cylinder arrangement for reducing the friction of a piston on an inner cylinder wall of the glass cylinder includes: elevating surface energy of glass of an interior bounded by the inner cylinder wall and hence lowering a contact angle of the glass with water. The contact angle is lowered by: a gas discharge that acts on the glass at the inner cylinder wall and is generated by an electric or electromagnetic field; or the action of ozone on the glass surface. The glass with the lowered contact angle is contacted with water to form a water film on the contacted glass.

Method For Producing a Solar Cell, in Particular a Silicon Thin-Film Solar Cell
20180083147 · 2018-03-22 ·

A method for producing a solar cell, in particular a silicon thin-film solar cell, wherein a TCO layer (3) is applied to a glass substrate (1) and at least one silicon layer (4, 5) is applied to the TCO layer (3). Before the TCO layer (3) is applied, electron radiation is applied to the glass substrate (1), such that a light-scattering layer (2) of the glass substrate (1) is produced, to which light-scattering layer the TCO layer (3) is applied. Alternatively or additionally, a first silicon layer (4) may be applied to the TCO layer (3), a laser radiation or electron radiation may be applied to the first silicon layer (4), and a second silicon layer (5) may be applied to the irradiated first silicon layer (4).

Glass pane bombardment degassing device

This application discloses a glass pane bombardment degassing device. The glass pane bombardment degassing device comprises a vacuum box body, a glass pane carrying device, an inlet and an outlet arranged on the vacuum box body for the glass pane carrying device to enter or exit the body, a bottom plate arranged on the glass pane carrying device to stack a plurality of glass panes stacked, every two adjacent glass panes being separated from each other, and a bombardment device placed inside the vacuum box body. The bombardment device includes a first and a second electrodes arranged in an up-and-down opposite way and connected with a positive electrode of a power supply, a moving electrode arranged between the first and second electrodes and connected with a negative electrode of the power supply, to generate ion or electron streams performing bombardment degassing to glass panes.

PROCESS FOR FABRICATING CHLORO ALKALI PHOSPHATE DOPED/ CODOPED BY RARE EARTH IONS FOR OPTICAL LASER AMPLIFIERS

The present invention generally relates to a process for fabricating Chloro Alkali Phosphate Doped/Codoped by rare earth ions for optical laser amplifiers. The process includes mixing 38-42 wt. % of Phosphorus pentoxide (P.sub.2O.sub.5), 28-32 wt. % of Zinc oxide (ZnO), 9-11 wt. % of Barium fluoride (BaF.sub.2), 17-19 wt. % of Lithium chloride (LiCl), and 1-3 wt. % of Lead(II) fluoride (PbF.sub.2); filling a silica, platinum, and alumina crucible to the mixture; heating the mixture upon increasing a furnace temperature to 1000-1050 C. at a rate of 10 C. per minute and maintaining it for two hours to melt the glass; and pouring the glass melt into a preheated stainless steel mold at 350 C. and transferring the mold to a holding furnace heated to 350-370 C. and annealing for two hours thereby cooling to room temperature to obtain Chloro Alkali Phosphate matrix glass that is undoped, doped, or codoped with high thermal stability.

MODIFYING BULK PROPERTIES OF A GLASS SUBSTRATE
20170144929 · 2017-05-25 ·

Embodiments of the disclosure provide an apparatus and methods for localized stress modulation for overlay and substrate distortion using electron or ion implantation directly to a glass substrate. In one embodiment, a process for modifying a bulk property of a glass substrate generally includes identifying a stress pattern of a glass substrate, determining doping parameters to correct a defect (e.g., overlay error or substrate distortion) based on the stress pattern, and providing a treatment recipe to a treatment tool, wherein the treatment recipe is formulated according to the doping parameters. The process may further include performing a doping treatment process on the glass substrate using the treatment recipe to correct the overlay error or substrate distortion. In some embodiments, the treatment recipe is determined by comparing the stress pattern with a database library containing data correlating stress changes in glass substrates to various doping parameters.

Method For Producing a Solar Cell, in Particular a Silicon Thin-Film Solar Cell
20170054040 · 2017-02-23 ·

A method for producing a solar cell, in particular a silicon thin-film solar cell, wherein a TCO layer (3) is applied to a glass substrate (1) and at least one silicon layer (4, 5) is applied to the TCO layer (3). Before the TCO layer (3) is applied, electron radiation is applied to the glass substrate (1), such that a light-scattering layer (2) of the glass substrate (1) is produced, to which light-scattering layer the TCO layer (3) is applied. Alternatively or additionally, a first silicon layer (4) may be applied to the TCO layer (3), a laser radiation or electron radiation may be applied to the first silicon layer (4), and a second silicon layer (5) may be applied to the irradiated first silicon layer (4).