A method for manufacturing fine surface roughness having an average pitch of 50 nanometers to 5 micrometers on a quartz glass substrate without preparing a mask prior to an etching process, the method comprising the steps of: making the quartz glass substrate undergo ion etching with argon gas in an ion etching apparatus, in which the quartz glass substrate is placed on a first electrode, the first electrode is connected to a high frequency power source and a second electrode is grounded; and making the quartz glass substrate undergo reactive ion etching with trifluoromethane (CHF.sub.3) gas or a mixed gas of trifluoromethane (CHF.sub.3) and oxygen in the ion etching apparatus in which the quartz glass substrate is placed on the first electrode, the first electrode is connected to the high frequency power source and the second electrode is grounded.

A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.

A method for strengthening an edge of a glass laminate including a glass core layer positioned between a first glass clad layer and a second glass clad layer may include forming a channel in the edge of the glass laminate. Sidewalls of the channel may be formed from the first glass clad layer and the second glass clad layer. Glass filler material having a filler coefficient of thermal expansion greater than a core coefficient of thermal expansion may be positioned in the channel. The glass filler material and the sidewalls of the channel may be fused to the second glass clad layer thereby forming an edge cap over the channel. The edge of the glass laminate is under compressive stress after the glass filler material is enclosed in the channel.

A method for manufacturing an annular glass plate that has an outer circumferential edge surface, an inner circumferential edge surface, and a thickness not larger than 0.6 mm includes processing for manufacturing an annular glass plate by irradiating each of the outer circumferential edge surface and the inner circumferential edge surface of an annular glass blank with a laser beam to melt the outer circumferential edge surface and the inner circumferential edge surface and form molten surfaces such that the molten surfaces in the outer circumferential edge surface and the inner circumferential edge surface each have an arithmetic average surface roughness Ra not larger than 0.1 μm, and the surface roughness of the molten surface in the inner circumferential edge surface becomes larger than the surface roughness of the molten surface in the outer circumferential edge surface.

A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

A method for strengthening an edge of a glass laminate including a glass core layer positioned between a first glass clad layer and a second glass clad layer may include forming a channel in the edge of the glass laminate. Sidewalls of the channel may be formed from the first glass clad layer and the second glass clad layer. Glass filler material having a filler coefficient of thermal expansion greater than a core coefficient of thermal expansion may be positioned in the channel. The glass filler material and the sidewalls of the channel may be fused to the second glass clad layer thereby forming an edge cap over the channel. The edge of the glass laminate is under compressive stress after the glass filler material is enclosed in the channel.

A method of treating a surface of a silicon substrate forms an accelerated gas cluster ion beam of carbon atoms, promotes fragmentation and/or dissociation of gas cluster ions in the beam, removes charged particles from the beam to form a neutral beam, and treats a portion of a surface of the silicon substrate by irradiating it with the neutral beam. A silicon substrate surface layer of SiC.sub.X (0.05<X<3) formed by accelerated and focused Neutral Beam irradiation of a silicon substrate wherein the Neutral Beam is derived from a gas cluster ion beam which has had its cluster ions dissociated and charged particles removed.

This application discloses a glass pane bombardment degassing device. The glass pane bombardment degassing device comprises a vacuum box body, a glass pane carrying device, an inlet and an outlet arranged on the vacuum box body for the glass pane carrying device to enter or exit the body, a bottom plate arranged on the glass pane carrying device to stack a plurality of glass panes stacked, every two adjacent glass panes being separated from each other, and a bombardment device placed inside the vacuum box body. The bombardment device includes a first and a second electrodes arranged in an up-and-down opposite way and connected with a positive electrode of a power supply, a moving electrode arranged between the first and second electrodes and connected with a negative electrode of the power supply, to generate ion or electron streams performing bombardment degassing to glass panes.

Disclosed herein are methods for welding a first substrate and a second substrate, the method comprising bringing the first and second substrates into contact to form a substrate interface, and directing a laser beam operating at a predetermined wavelength through the second substrate onto the substrate interface, wherein the first substrate absorbs light from the laser beam in an amount sufficient to form a weld between the first substrate and the second substrate. The disclosure also relates to glass and/or glass-ceramic packaging and OLED display produced according to the methods disclosed herein.